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IPL60R125C7 INFINEON 英飞凌芯片 中文版规格书手册.pdf
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IPL60R125C7 INFINEON 英飞凌芯片 中文版规格书手册
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1
IPL60R125C7
Rev.2.1,2017-08-30Final Data Sheet
ThinPAK8x8
Drain
Pin 5
Gate
Pin 1
Power
Source
Pin 3,4
Driver
Source
Pin 2
MOSFET
600VCoolMOSªC7PowerTransistor
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithR
DS(on)
*Abelow1Ohm*mm².
Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns
•IncreasedefficiencyduetobestinclassFOMR
DS(on)
*E
oss
andR
DS(on)
*Q
g
•BestinclassR
DS(on)
/package
•SMDpackagewithverylowparasiticinductanceforeasydevicecontrol
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
•4pinkelvinsourceconcept
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
•Enablinghighersystemefficiencybylowerswitchinglosses
•Increasedpowerdensitysolutionsduetosmallerpackages
•OptimizedPCBassemblyandlayoutsolutions
•Suitableforapplicationssuchasserver,telecomandsolar
•Upto0.5%betterfullloadefficiency@100kHzcomparedtoconventional
3pinpackage
Potentialapplications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
@ T
j,max
650 V
R
DS(on),max
125 mΩ
Q
g,typ
34 nC
I
D,pulse
66 A
I
D,continuous
@ T
j
<150°C 30 A
E
oss
@ 400V 4 µJ
Body diode di
F
/dt 380 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPL60R125C7 PG-VSON-4 60C7125 see Appendix A
2
600VCoolMOSªC7PowerTransistor
IPL60R125C7
Rev.2.1,2017-08-30Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
600VCoolMOSªC7PowerTransistor
IPL60R125C7
Rev.2.1,2017-08-30Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
17
12
A
T
C
=25°C
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
- - 66 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 78 mJ I
D
=4.4A; V
DD
=50V; see table 10
Avalanche energy, repetitive E
AR
- - 0.39 mJ I
D
=4.4A; V
DD
=50V; see table 10
Avalanche current, single pulse I
AS
- - 4.4 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns V
DS
=0...400V
Gate source voltage (static) V
GS
-20 - 20 V static;
Gate source voltage (dynamic) V
GS
-30 - 30 V AC (f>1 Hz)
Power dissipation P
tot
- - 103 W T
C
=25°C
Storage temperature T
stg
-40 - 150 °C -
Operating junction temperature T
j
-40 - 150 °C -
Mounting torque - - - n.a. Ncm -
Continuous diode forward current I
S
- - 17 A T
C
=25°C
Diode pulse current
2)
I
S,pulse
- - 66 A T
C
=25°C
Reverse diode dv/dt
3)
dv/dt - - 20 V/ns
V
DS
=0...400V,I
SD
<=6.7A,T
j
=25°C
see table 8
Maximum diode commutation speed di
F
/dt - - 380 A/µs
V
DS
=0...400V,I
SD
<=6.7A,T
j
=25°C
see table 8
Insulation withstand voltage V
ISO
- - n.a. V V
rms
,T
C
=25°C,t=1min
1)
Limited by T
j max
.
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch
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