IRF1104PBF INFINEON 英飞凌 电子元器件芯片.pdf
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IRF1104PbF
HEXFET
®
Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
G
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 100
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 71 A
I
DM
Pulsed Drain Current 400
P
D
@T
C
= 25°C Power Dissipation 170 W
Linear Derating Factor 1.11 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 350 mJ
I
AR
Avalanche Current 60 A
E
AR
Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.90
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.009Ω
I
D
= 100A
T
O
-22
0
AB
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
02/02/04
www.irf.com 1
PD - 94967
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