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BSC028N06NSSC INFINEON 英飞凌芯片 中文版规格书.pdf
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BSC028N06NSSC INFINEON 英飞凌芯片 中文版规格书
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1
BSC028N06NSSC
Rev.2.0,2019-11-19Final Data Sheet
1
2
3
4
8
7
6
5
tab
PG-WSON-8-2
Drain
Pin 5-8
Gate
Pin 4
Source
Pin 1-3, tab
MOSFET
OptiMOS
TM
Power-Transistor,60V
Features
•Doublesidecooledpackage-withlowestJunction-topthermalresistance
•175°Crated
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
60 V
R
DS(on),max
2.8 mΩ
I
D
137 A
Q
oss
43 nC
Q
G
(0..10V) 37 nC
Type/OrderingCode Package Marking RelatedLinks
BSC028N06NSSC PG-WSON-8-2 028N06SC -
2
OptiMOS
TM
Power-Transistor,60V
BSC028N06NSSC
Rev.2.0,2019-11-19Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
OptiMOS
TM
Power-Transistor,60V
BSC028N06NSSC
Rev.2.0,2019-11-19Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current I
D
-
-
-
-
-
-
137
97
24
A
V
GS
=10V,T
C
=25°C
1)
V
GS
=10V,T
C
=100°C
V
GS
=10V,T
C
=25°C,R
thJA
=50K/W
2)
Pulsed drain current
3)
I
D,pulse
- - 548 A T
C
=25°C
Avalanche energy, single pulse
4)
E
AS
- - 100 mJ I
D
=50A,R
GS
=25Ω
Gate source voltage V
GS
-20 - 20 V -
Power dissipation P
tot
-
-
-
-
100
3.0
W
T
C
=25°C
T
A
=25°C,R
thJA
=50K/W
3)
Operating and storage temperature T
j
,T
stg
-55 - 175 °C
IEC climatic category;
DIN IEC 68-1: 55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case,
bottom
R
thJC
- 0.9 1.5 K/W -
Thermal resistance, junction - case,
top
R
thJC
- 0.7 1.4 K/W -
Device on PCB,
6 cm
2
cooling area
2)
R
thJA
- - 50 K/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental
conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
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