BSC028N06NS INFINEON 英飞凌芯片 中文版规格书.pdf
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Type
BSC028N06NS
OptiMOS
TM
Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
V
GS
=10 V, T
C
=25 °C
100 A
V
GS
=10 V, T
C
=100 °C
83
V
GS
=10 V, T
C
=25 °C,
R
thJA
=50K/W
2)
23
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
400
Avalanche energy, single pulse
4)
E
AS
I
D
=50 A, R
GS
=25 W
100 mJ
Gate source voltage
V
GS
±20 V
3)
See figure 3 for more detailed information
Value
1)
J-STD20 and JESD22
4)
See figure 13 for more detailed information
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
PG-TDSON-8
Type
Package
Marking
BSC028N06NS
PG-TDSON-8
028N06NS
V
DS
60
V
R
DS(on),max
2.8
mW
I
D
100
A
Q
oss
43
nC
Q
G
(0..10V)
37
nC
Product Summary
Rev.2.1 page 1 2013-01-18
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