OptiMOS
TM
Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
V
GS
=10 V, T
C
=25 °C
100 A
V
GS
=10 V, T
C
=25 °C,
R
thJA
=50K/W
2)
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
400
Avalanche energy, single pulse
4)
E
AS
I
D
=50 A, R
GS
=25 W
50 mJ
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
2)
Device on 40 x 40 x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Rev.2.1 page 1 2012-12-07