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1
BSC016N06NST
Rev.2.0,2017-03-01Final Data Sheet
1
2
3
4
5
6
7
8
4
3
2
1
5
6
7
8
TDSON-8FL(enlargedsourceinterconnection)
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
MOSFET
OptiMOS
TM
Power-MOSFET,60V
Features
•Optimizedforsynchronousrectification
•175°Crated
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
60 V
R
DS(on),max
1.6 mΩ
I
D
100 A
Q
OSS
81 nC
Q
G
(0V..10V) 71 nC
Type/OrderingCode Package Marking RelatedLinks
BSC016N06NST TDSON-8 FL 016N06NT -
1)
J-STD20 and JESD22

2
OptiMOS
TM
Power-MOSFET,60V
BSC016N06NST
Rev.2.0,2017-03-01Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3
OptiMOS
TM
Power-MOSFET,60V
BSC016N06NST
Rev.2.0,2017-03-01Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current I
D
-
-
-
-
-
-
100
100
31
A
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=10V,T
A
=25°C,R
thJA
=50K/W
1)
Pulsed drain current
2)
I
D,pulse
- - 400 A T
C
=25°C
Avalanche energy, single pulse
3)
E
AS
- - 380 mJ I
D
=50A,R
GS
=25Ω
Gate source voltage V
GS
-20 - 20 V -
Power dissipation P
tot
-
-
-
-
167
3.0
W
T
C
=25°C
T
A
=25°C,R
thJA
=50K/W
Operating and storage temperature T
j
,T
stg
-55 - 175 °C -
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case,
bottom
R
thJC
- 0.5 0.9 K/W -
Thermal resistance, junction - case,
top
R
thJC
- - 20 K/W -
Device on PCB,
6 cm
2
cooling area
1)
R
thJA
- - 50 K/W -
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
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