IRFP3006PbF
1 www.irf.com © 2013 International Rectifier September 06, 2013
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Gate Drain Source
G D S
V
DSS
60V
R
DS(on)
typ.
2.1m
max.
2.5m
I
D (Silicon Limited)
270A
I
D (Package Limited)
195A
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
IRFP3006PbF
TO-247 Tube 25 IRFP3006PbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
270
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V(Silicon Limited)
190
I
DM
Pulsed Drain Current 1080
P
D
@T
C
= 25°C
Maximum Power Dissipation 375
W
Linear Derating Factor 2.5
W/°C
V
GS
Gate-to-Source Voltage ± 20
V
T
J
Operating Junction and -55 to + 175
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
Mounting torque, 6-32 or M3 screw 10lbf
in (1.1Nm)
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy 320 mJ
I
AR
Avalanche Current
See Fig. 14, 15, 22a, 22b
A
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case
–––
0.4
R
CS
Case-to-Sink, Flat Greased Surface
0.24 –––
°C/W
R
JA
Junction-to-Ambient
––– 40
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited) 195
dv/dt
Peak Diode Recovery 10
V/ns
TO-247AC
G
D
S
D
S
G
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