06/02/08
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
www.irf.com 1
IRFP4368PbF
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
HEXFET
®
Power MOSFET
S
D
G
PD - 97322
GDS
Gate Drain Source
TO-247AC
S
D
G
D
V
DSS
75V
R
DS
(
on
)
typ.
1.46m
Ω
max. 1.85m
Ω
I
D (Silicon Limited)
350A
c
I
D (Package Limited)
195A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Energy
g
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
k
–––
0.29
R
θ
CS
Case-to-Sink, Flat Greased Surface
0.24 ––– °C/W
R
θ
JA
Junction-to-Ambient
jk
––– 40
430
See Fig. 14, 15, 22a, 22b
520
13
-55 to + 175
± 20
3.4
10lb
x
in (1.1N
x
m)
300
Max.
350
c
250
c
1280
195
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