BSC014N06NST INFINEON 英飞凌芯片 中文版规格书.pdf
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BSC014N06NST
Rev.2.0,2017-03-01Final Data Sheet
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TDSON-8FL(enlargedsourceinterconnection)
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
MOSFET
OptiMOS
TM
Power-Transistor,60V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•175°Crated
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
60 V
R
DS(on),max
1.45 mΩ
I
D
100 A
Q
OSS
100 nC
Q
G
(0V..10V) 89 nC
Type/OrderingCode Package Marking RelatedLinks
BSC014N06NST TDSON-8 FL 014N06NT -
1)
J-STD20 and JESD22
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