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TI-AMC7812B.pdf
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TI-AMC7812B.pdf
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ADC-REF-IN/CMP
CH0
CH1
CH2
CH3
CH4
CH5
CH6
CH7
CH8
CH9
CH10
CH11
CH12
CH13
CH14
CH15
D1+
D2+
D1-
D2-
ALARM
DAV
RESET
CNVT
SCLK/SCL
SPI/I2C
DGND
IOV
DD
DV
DD
SDI/SDA
CS/A0
SDO/A1
REF-DAC
REF-OUT
AGND4
Local
Temperature
Sensor
Remote
Temperature
Sensor
Driver
Out-of-Range
Alarms
Control
Logic
Serial Interface Register and Control
(SPI/I C)
2
DACs Clear Logic
Control/Limits/Status
Registers
Trigger
Reference
(2.5V)
AMC7812B
ADC
DAC-0
DAC-11
LOAD-DAC
DAC0-OUT
DAC1-OUT
DAC2-OUT
DAC3-OUT
DAC4-OUT
DAC5-OUTDAC6-OUT
DAC7-OUTDAC8-OUT
DAC9-OUTDAC10-OUT
DAC11-OUT
DAC-CLR-0
DAC-CLR-1
AGND3
AGND2
AGND1
AV
DD2
AV
DD1
AV
CC
Single-Ended/
Differential
Single-Ended
GPIO-5
A2
GPIO-4
GPIO-7
GPIO-6
GPIO Controller
GPIO-3
GPIO-0
TEMP/GPIO
GPIO
AMC7812B
www.ti.com.cn
ZHCSBJ9A –SEPTEMBER 2013–REVISED SEPTEMBER 2013
具具有有多多通通道道模模数数转转换换器器 (ADC),,数数模模转转换换器器 (DAC) 和和温温度度传传感感器器的的
12 位位模模拟拟监监视视和和控控制制解解决决方方案案
查查询询样样品品: AMC7812B
1
特特性性
说说明明
2345
• 具具有有可可编编程程输输出出的的 12 个个 12 位位 DAC::
AMC7812B 是一款完整的模拟监视和控制解决方案,
此解决方案包括一个 16 通道,12 位模数转换器
– 0V 至至 5V
(ADC),十二个 12 位数模转换器 (DAC),8 个通用输
– 0V 至至 12.5V
入输出 (GPIO),以及两个远程和一个本地温度传感器
• DAC 关关断断至至用用户户定定义义电电平平
通道。
• 具具有有 16 个个输输入入的的 12 位位,,500 每每秒秒千千次次采采样样
(kSPS) ADC::
此器件具有一个内部 +2.5V 基准,可将 DAC 输出电压
– 16 个个单单端端或或
配置在 0V 至 +5V 或 0V 至 +12.5V 的范围内。也可使
两两个个差差分分 + 12 个个单单端端
用一个外部基准。 典型功率耗散为
• 两两个个远远程程温温度度传传感感器器::
95mW。 AMC7812B 非常适合于电路板空间、尺寸和
– ±2°C 精精度度,,–40°C 至至 +150°C
低功耗都十分关键的多通道应用。
• 一一个个内内部部温温度度传传感感器器::
此器件采用 QFN-64 或 HTQFP-64 PowerPAD™ 封
– ±2.5°C 精精度度,,–40°C 至至 +125°C
装,在 -40°C 至 +105°C 的温度范围内完全额定运
• 范范围围外外输输入入警警报报
行,并且在 -40°C 至 +125°C 的完全温度范围内可
• 2.5V 内内部部基基准准
用。
• 八八个个通通用用输输入入和和输输出出
• 可可配配置置兼兼容容 I
2
C 和和 SPI™ 接接口口,,此此接接口口具具有有 5V 和和
对于那些要求一个不同的通道数、额外的特性、或者转
3V 逻逻辑辑电电平平
换器解决方案的应用,德州仪器 (TI) 提供一个模拟监
• 省省电电模模式式
视器和控制 (AMC) 产品的完整系列产品。 更多信息请
• 宽宽工工作作温温度度范范围围::
参考www.ti.com/amc。
-40℃℃ 至至 +125℃℃
• 小小型型封封装装::9mm × 9mm 四四方方扁扁平平无无引引线线 (QFN)-
64,,和和 10mm × 10mm 带带散散热热片片薄薄型型四四方方扁扁平平封封
装装 (HTQFP)-64
应应用用范范围围
• 基基站站中中的的射射频频 (RF) 功功率率放放大大器器控控制制
• 测测试试和和测测量量
• 工工业业控控制制
• 普普通通模模拟拟监监视视和和控控制制
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2PowerPAD is a trademark of Texas Instruments, Incorporated.
3SPI, QSPI are trademarks of Motorola, Inc.
4MICROWIRE is a trademark of National Semiconductor.
5All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not English Data Sheet: SBAS625
necessarily include testing of all parameters.
AMC7812B
ZHCSBJ9A –SEPTEMBER 2013–REVISED SEPTEMBER 2013
www.ti.com.cn
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
(1)
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range, unless otherwise noted.
VALUE UNIT
AV
DD
to GND –0.3 to +6 V
DV
DD
to GND –0.3 to +6 V
IOV
DD
to GND –0.3 to +6 V
AV
CC
to GND –0.3 to +18 V
DV
DD
to DGND –0.3 to +6 V
Analog input voltage to GND –0.3 to AV
DD
+ 0.3 V
ALARM, GPIO-0, GPIO-1, GPIO-2, GPIO-3, SCLK/SCL, and SDI/SDA to GND –0.3 to +6 V
D1+/GPIO-4, D1–/GPIO-5, D2+/GPIO-6, D2–/GPIO-7 to GND –0.3 to AV
DD
+ 0.3 V
Digital input voltage to DGND –0.3 to IOV
DD
+ 0.3 V
SDO and DAV to GND –0.3 to IOV
DD
+ 0.3 V
Operating temperature range –40 to +125 °C
Storage temperature range –40 to +150 °C
Junction temperature range (T
J
max) +150 °C
Human body model (HBM) 2.5 kV
Electrostatic discharge (ESD)
ratings
Charged device model (CDM) 1.0 kV
(1) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute
maximum conditions for extended periods may affect device reliability.
THERMAL INFORMATION
AMC7812B
THERMAL METRIC
(1)
RGC (QFN) PAP (HTQFP) UNITS
64 PINS 64 PINS
θ
JA
Junction-to-ambient thermal resistance 24.1 33.7
θ
JCtop
Junction-to-case (top) thermal resistance 8.1 9.5
θ
JB
Junction-to-board thermal resistance 3.2 9.0
°C/W
ψ
JT
Junction-to-top characterization parameter 0.1 0.3
ψ
JB
Junction-to-board characterization parameter 3.3 8.9
θ
JCbot
Junction-to-case (bottom) thermal resistance 0.6 0.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
2 Copyright © 2013, Texas Instruments Incorporated
AMC7812B
www.ti.com.cn
ZHCSBJ9A –SEPTEMBER 2013–REVISED SEPTEMBER 2013
ELECTRICAL CHARACTERISTICS
At T
A
= –40°C to +105°C, AV
DD
= DV
DD
= 4.5 V to 5.5 V, AV
CC
= +15 V, AGND = DGND = 0 V, IOV
DD
= 2.7 V to 5.5 V,
internal 2.5-V reference, and the DAC output span = 0 V to 5 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DAC PERFORMANCE
DAC DC ACCURACY
Resolution 12 Bits
T
A
= –40°C to +105°C, measured by line passing
±1 LSB
through codes 020h and FFFh
INL Relative accuracy
T
A
= –40°C to +125°C, measured by line passing
±1.25 LSBs
through codes 020h and FFFh
T
A
= –40°C to +125°C, measured by line passing
DNL Differential nonlinearity ±0.3 ±1 LSB
through codes 020h and FFFh
T
A
= +25°C, DAC output = 5.0 V ±10 mV
TUE Total unadjusted error
T
A
= +25°C, DAC output = 12.5 V ±30 mV
T
A
= +25°C, DAC output = 0 V to +5 V,
±2 mV
code 020h
Offset error
T
A
= +25°C, DAC output = 0 V to +12.5 V,
±5 mV
code 020h
Offset error temperature coefficient ±1 ppm/°C
T
A
= –40°C to +125°C, external reference,
±0.025 ±0.15 %FSR
output = 0 V to +5 V
Gain error
T
A
= –40°C to +125°C, external reference,
–0.15 ±0.3 %FSR
output = 0 V to +12.5 V
Gain temperature coefficient ±2 ppm/°C
DAC OUTPUT CHARACTERISTICS
T
A
= –40°C to +125°C, V
REF
= 2.5 V, gain = 2 0 5 V
Output voltage range
(1)
T
A
= –40°C to +125°C, V
REF
= 2.5 V, gain = 5 0 12.5 V
DAC output = 0 V to +5 V, code 400h to C00h,
Output voltage settling time
(2)
to 1/2 LSB, from CS rising edge, R
L
= 2 kΩ, 3 µs
C
L
= 200 pF
Slew rate
(2)
1.5 V/µs
Short-circuit current
(2)
Full-scale current shorted to ground 30 mA
Source within 200 mV of supply, T
A
= +25°C +10 mA
Sink within 300 mV of supply, T
A
= +25°C –10 mA
Load current
DAC output = 0 V to +5 V, code B33h. Source and
sink with voltage drop < 25 mV, ±8 mA
T
A
= –40°C to +95°C
Capacitive load stability
(2)
R
L
= infinite 10 nF
DC output impedance
(2)
Code 800h 0.3 Ω
Power-on overshoot AV
CC
0 V to 5 V, 2-ms ramp 5 mV
Digital-to-analog glitch energy Code changes from 7FFh to 800h, 800h to 7FFh 0.15 nV-s
Digital feedthrough Device is not accessed 0.15 nV-s
T
A
= +25°C, at 1 kHz, code 800h, gain = 2,
81 nV/√Hz
excludes reference
Output noise
f = 0.1 Hz to 10 Hz, excludes reference 8 µV
PP
DAC REFERENCE INPUT
Reference voltage input range T
A
= –40°C to +125°C, REF-DAC pin 1 2.6 V
Input current
(2)
V
REF
= 2.5 V 170 µA
(1) The output voltage must not be greater than AV
CC
. See the DAC Output section for further details.
(2) Sampled during initial release to ensure compliance; not subject to production testing.
Copyright © 2013, Texas Instruments Incorporated 3
AMC7812B
ZHCSBJ9A –SEPTEMBER 2013–REVISED SEPTEMBER 2013
www.ti.com.cn
ELECTRICAL CHARACTERISTICS (continued)
At T
A
= –40°C to +105°C, AV
DD
= DV
DD
= 4.5 V to 5.5 V, AV
CC
= +15 V, AGND = DGND = 0 V, IOV
DD
= 2.7 V to 5.5 V,
internal 2.5-V reference, and the DAC output span = 0 V to 5 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INTERNAL REFERENCE
Output voltage T
A
= +25°C, REF-OUT pin 2.495 2.5 2.505 V
Output impedance 0.4 Ω
Reference temperature coefficient T
A
= –40°C to +125°C 10 25 ppm/°C
Output current (sourcing and sinking) ±5 mA
T
A
= +25°C, f = 1 kHz 260 nV/√Hz
Output voltage noise
f = 0.1 Hz to 10 Hz 13 µV
PP
ADC PERFORMANCE
ADC DC ACCURACY (for AV
DD
= 5 V)
Resolution 12 Bits
INL Integral nonlinearity T
A
= –40°C to +125°C ±0.5 ±1 LSB
DNL Differential nonlinearity T
A
= –40°C to +125°C ±0.5 ±1 LSB
Single-Ended Mode
Offset error ±1 ±3 LSB
Offset error match ±0.4 LSB
Gain error External reference ±1 ±5 LSB
Gain error match ±0.4 LSB
Differential Mode
External reference, 0 V to (2 × V
REF
) mode,
±2 ±5 LSB
V
CM
= 2.5 V
Gain error
External reference, 0 V to V
REF
mode,
±1 ±5 LSB
V
CM
= 1.25 V
Gain error match ±0.5 LSB
0 V to (2 × V
REF
) mode, V
CM
= 2.5 V ±1 ±3 LSB
Zero code error
External reference, 0 V to V
REF
mode,
±1 ±3 LSB
V
CM
= 1.25 V
Zero code error match ±0.5 LSB
Common-mode rejection At dc, 0 V to (2 × V
REF
) mode 67 dB
SAMPLING DYNAMICS
External single analog channel, auto mode 500 kSPS
Conversion rate
External single analog channel, direct mode 167 kSPS
Conversion time
(3)
External single analog channel 2 µs
Autocycle update rate
(3)
All 16 single-ended inputs enabled 32 µs
Throughput rate SPI clock, 12 MHz or greater, single channel 500 kSPS
ANALOG INPUT
(4)
T
A
= –40°C to +125°C, single-ended, 0 V to V
REF
0 V
REF
V
T
A
= –40°C to +125°C, single-ended,
0 2 × V
REF
V
0 V to (2 × V
REF
)
Full-scale input voltage
T
A
= –40°C to +125°C, V
IN+
– V
IN–
, fully-differential,
–V
REF
+V
REF
V
0 V to V
REF
T
A
= –40°C to +125°C, V
IN+
– V
IN–
, fully-differential,
–2 × V
REF
2 × V
REF
V
0 V to (2 × V
REF
)
Absolute input voltage T
A
= –40°C to +125°C GND – 0.2 AV
DD
+ 0.2 V
0 V to V
REF
mode 118 pF
Input capacitance
(3)
0 V to (2 × V
REF
) mode 73 pF
DC input leakage current Unselected ADC input ±10 µA
ADC REFERENCE INPUT
Reference input voltage range T
A
= –40°C to +125°C 1.2 AV
DD
V
Input current V
REF
= 2.5 V 145 µA
(3) Sampled during initial release to ensure compliance; not subject to production testing.
(4) V
IN+
or V
IN–
must remain within GND – 0.2 V and AV
DD
+ 0.2 V; see the Analog Inputs section.
4 Copyright © 2013, Texas Instruments Incorporated
AMC7812B
www.ti.com.cn
ZHCSBJ9A –SEPTEMBER 2013–REVISED SEPTEMBER 2013
ELECTRICAL CHARACTERISTICS (continued)
At T
A
= –40°C to +105°C, AV
DD
= DV
DD
= 4.5 V to 5.5 V, AV
CC
= +15 V, AGND = DGND = 0 V, IOV
DD
= 2.7 V to 5.5 V,
internal 2.5-V reference, and the DAC output span = 0 V to 5 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INTERNAL ADC REFERENCE BUFFER
Offset T
A
= +25°C ±5 mV
INTERNAL TEMPERATURE SENSOR
Operating range –40 +125 °C
AV
DD
= 5 V, T
A
= –40°C to +125°C ±1.25 ±2.5 °C
Accuracy
AV
DD
= 5 V, T
A
= 0°C to +100°C ±1.5 °C
Resolution Per LSB 0.125 °C
Conversion rate External temperature sensors are disabled 15 ms
EXTERNAL TEMPERATURE SENSOR (Using 2N3906 external transistor)
Operating range Limited by external diode –40 +150 °C
AV
DD
= 5 V, T
A
= 0°C to +100°C,
±1.5 °C
T
D
= –40°C to +150°C
Accuracy
(5)(6)
AV
DD
= 5 V, T
A
= –40°C to +100°C,
±2 °C
T
D
= –40°C to +150°C
Resolution Per LSB 0.125 °C
With resistance cancellation
72 93 100 ms
(RC bit = '1')
Conversion rate per sensor
Without resistance cancellation
33 44 47 ms
(RC bit = '0')
DIGITAL LOGIC: GPIO
(7)(8)
and ALARM
IOV
DD
= +5 V 2.1 0.3 + IOV
DD
V
V
IH
Input high voltage
T
A
= –40°C to +125°C, IOV
DD
= +3.3 V 2.2 0.3 + IOV
DD
V
IOV
DD
= +5 V –0.3 0.8 V
V
IL
Input low voltage
T
A
= –40°C to +125°C, IOV
DD
= +3.3 V –0.3 0.7 V
T
A
= –40°C to +125°C, IOV
DD
= +5 V, sinking 5 mA 0.4 V
V
OL
Output low voltage
T
A
= –40°C to +125°C, IOV
DD
= +3.3 V,
0.4 V
sinking 2 mA
High-impedance leakage 5 µA
High-impedance output capacitance 10 pF
DIGITAL LOGIC: All Except SCL, SDA, ALARM, and GPIO
IOV
DD
= +5 V 2.1 0.3 + IOV
DD
V
V
IH
Input high voltage
T
A
= –40°C to +125°C, IOV
DD
= +3.3 V 2.2 0.3 + IOV
DD
V
IOV
DD
= +5 V –0.3 0.8 V
V
IL
Input low voltage
T
A
= –40°C to +125°C, IOV
DD
= +3.3 V –0.3 0.7 V
Input current ±1 µA
Input capacitance 5 pF
IOV
DD
= +5 V, sourcing 3 mA 4.8 V
V
OH
Output high voltage
IOV
DD
= +3.3 V, sourcing 3 mA 2.9 V
IOV
DD
= +5 V, sinking 3 mA 0.4 V
V
OL
Output low voltage
IOV
DD
= +3.3 V, sinking 3 mA 0.4 V
High-impedance leakage ±5 µA
High-impedance output capacitance 10 pF
(5) T
D
is the external diode temperature.
(6) Auto conversion mode disabled.
(7) For pins GPIO0 to GPIO3, the external pull-up resistor must be connected to a voltage less than or equal to 5.5 V.
(8) For pins GPIO4 to GPIO7, the external pull-up resistor must be connected to a voltage less than or equal to AV
DD
.
Copyright © 2013, Texas Instruments Incorporated 5
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