TI-BUF08630.pdf资源-CSDN文库

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【BUF08630芯片概述】 BUF08630是一款由德州仪器（Texas Instruments）制造的可编程伽马电压发生器，它集成了高速率VCOM（电压基准）功能以及双银行非易失性内存。这款芯片设计用于TFT-LCD（薄膜晶体管液晶显示器）应用，提供精细的显示质量控制，尤其是在色彩校正和对比度优化方面。【主要特性】 1. **10位分辨率**：BUF08630提供了8个可编程的伽马通道和1个可编程的VCOM通道，每个通道具有10位分辨率，能够实现高精度的电压设置。 2. **8通道P-Gamma**：8个伽马通道支持独立编程，允许用户根据需求调整不同通道的电压，以适应不同的显示场景。 3. **1通道P-VCOM**：VCOM通道同样可编程，能快速响应以适应显示面板的电压变化。 4. **高速VCOM**：具有45V/μs的高速摆率，确保快速稳定地改变VCOM电压，提高显示响应速度。 5. **16倍重写非易失性内存**：芯片内置的非易失性内存可进行最多16次写操作，允许错误修正或LCD面板的重新工作。 6. **双独立选择的内存银行**：两个独立的内存银行可以存储两条不同的伽马曲线，方便在不同曲线间快速切换。 7. **rail-to-rail输出**：所有通道提供rail-to-rail输出，最小10mA负载下，输出摆幅可达到电源轨的300mV以内，典型情况下为150mV。 8. **低功耗**：供应电流低，适用于电源电压9V至20V的应用。 9. **数字供应电压**：数字部分的工作电压范围为2V至5.5V。 10. **两线接口**：采用两线接口进行编程，支持标准操作频率最高达400kHz和高速数据传输高达3.4MHz。 11. **1/2 AVDD能力**：该芯片能够在高达20V的高压环境下工作，并且具有1/2 AVDD功能，优化了电源效率。【应用领域】 BUF08630广泛应用于TFT-LCD显示器的参考驱动，特别是在需要高精度伽马校正和快速响应时间的场合。例如，它可以被用在平板电脑、电视、笔记本电脑和各种工业或商业显示设备中。【相关产品】 - BUF22821：22通道伽马校正缓冲器 - BUF16821：16通道伽马校正缓冲器这些相关产品提供不同数量的伽马通道，适合不同规模和复杂性的显示系统。【总结】 BUF08630是德州仪器推出的一款高度集成的显示驱动芯片，具备高精度、高速响应和灵活的内存配置，旨在提升TFT-LCD显示屏的性能和用户体验。其独特设计和强大功能使其成为现代显示技术中不可或缺的一部分。

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VCOM

DAC

16X Nonvolatile Memory BANK0

Control (IF and Memory)

SDA

SCL

DAC Resistors

OUT1

BKSEL

GND

2k 16OTP

Memory

COM-FB

COM-VS

COM-OUT

COM-GND

OUT2

OUT3

OUT4

DAC Resistors

OUT5

OUT6

OUT7

OUT8

16X Nonvolatile Memory BANK1

DGND

BUF08832

BUF08630

www.ti.com

SBOS515A –OCTOBER 2010–REVISED AUGUST 2012

Programmable Gamma-Voltage Generator and High Slew Rate V

COM

with Integrated Two-Bank Memory plus 1/2 AVDD Topology

Check for Samples: BUF08630

FEATURES

DESCRIPTION

The BUF08630 offers eight programmable gamma

• 10-Bit Resolution

channels and one programmable V

COM

channel.

• 8-Channel P-Gamma

The final gamma and V

COM

values can be stored in

• 1-Channel P-V

COM

the on-chip, nonvolatile memory. To allow for

• High Slew Rate V

COM

: 45 V/μs

programming errors or liquid crystal display (LCD)

• 16x Rewritable Nonvolatile Memory

panel rework, the BUF08630 supports up to 16 write

operations to the on-chip memory.

• Two Independent Pin-Selectable Memory

Banks

The BUF08630 has two separate memory banks,

allowing simultaneous storage of two different gamma

• Rail-to-Rail Output:

curves to facilitate switching between gamma curves.

– 300 mV Min Swing-to-Rail (10 mA)

All gamma and V

COM

channels offer a rail-to-rail

– > 300 mA Max I

OUT

output that typically swings to within 150 mV of either

• Low Supply Current

supply rail with a 10-mA load. All channels are

• Supply Voltage: 9 V to 20 V

programmed using a two-wire interface that supports

standard operations up to 400 kHz, and high-speed

• Digital Supply: 2 V to 5.5 V

data transfers up to 3.4 MHz.

• Two-Wire Interface:

The BUF08630 is manufactured using Texas

– Supports 400 kHz and 3.4 MHz

Instruments’ proprietary, state-of-the-art, high-voltage

• 1/2 AVDD Capability

CMOS process. This process offers very dense logic

and high supply voltage operation of up to 20V. The

APPLICATIONS

BUF08630 is available in a 20-pin QFN package, and

is specified from –40°C to +95°C.

• TFT-LCD Reference Drivers

RELATED PRODUCTS

FEATURES PRODUCT

22-channel gamma correction buffer BUF22821

16-channel gamma correction buffer BUF16821

12-channel gamma correction buffer BUF12800

18-/20-channel programmable buffer, 10-Bit, V

COM

BUF20800

18-/20-Channel programmable buffer with memory BUF20820

Programmable V

COM

driver BUF01900

22-V supply, traditional gamma buffers BUF11705

High-resolution, fully-programmable LCD bias IC for TV TPS65168

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

BUF08630

SBOS515A –OCTOBER 2010–REVISED AUGUST 2012

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE/ORDERING INFORMATION

(1)

PRODUCT PACKAGE PACKAGE DESIGNATOR PACKAGE MARKING

BUF08630 VQFN-20 RGW BUF08630

(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the

device product folder at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

Over operating free-air temperature range (unless otherwise noted).

BUF08630 UNIT

+22 V

Supply voltage V

GND + 4.0 < V

< V

– 4.0 V

+6 V

Digital input pins, SCL, SDA, AO, BKSEL: voltage –0.5 to +6 V

Digital input pins, SCL, SDA, AO, BKSEL: current ±10 mA

Output pins, OUT1 through OUT4

(2)

(V–) – 0.5 to (V

) + 0.5 V

Output pins, OUT5 through OUT8

(2)

) – 0.5 to (V+) + 0.5 V

COM

(2)

(V–) – 0.5 to (V+) + 0.5 V

Output short-circuit

(3)

Continuous

Ambient operating temperature –40 to +95 °C

Ambient storage temperature –65 to +150 °C

Junction temperature, T

+125 °C

Human body model (HBM) 4 kV

ESD ratings Charged device model (CDM) 1 kV

Machine model (MM) 200 V

(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not supported.

(2) See the Output Protection section.

(3) Short-circuit to ground, one amplifier per package. Exposed thermal die is soldered to the printed circuit board (PCB) using thermal vias.

Refer to Texas Instruments' application report SLAU271, QFN/SON PCB Attachment.

THERMAL INFORMATION

BUF08630

THERMAL METRIC

(1)

RGW UNITS

20 PINS

Junction-to-ambient thermal resistance 42.4

JC(top)

Junction-to-case(top) thermal resistance 34.4

Junction-to-board thermal resistance 10.4

°C/W

Junction-to-top characterization parameter 8.2

Junction-to-board characterization parameter 42.4

JC(bottom)

Junction-to-case(bottom) thermal resistance 2.1

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

Product Folder Links: BUF08630

BUF08630

www.ti.com

SBOS515A –OCTOBER 2010–REVISED AUGUST 2012

ELECTRICAL CHARACTERISTICS

Boldface limits apply over the specified temperature range, T

= –40°C to +95°C.

At T

= +25°C, V

= +18 V, V

= 9.0 V, V

= +2 V, and C

= 200 pF, unless otherwise noted.

BUF08630

PARAMETER CONDITIONS MIN TYP MAX UNIT

ANALOG GAMMA BUFFER CHANNELS

Reset value Code = 512 9 V

OUT1, 4 output swing: high Code = 1023, sourcing 10 mA 17.7 17.85 V

OUT1, 4 output swing: low Code = 512, sinking 10 mA V

+ 0.07 V

+ 0.3 V

OUT2, 3 output swing: high Code = 1023, sourcing 10 mA 17.5 17.85 V

OUT2, 3 output swing: low Code = 512, sinking 10 mA V

+ 0.07 V

+ 0.5 V

OUT5, 8 output swing: high Code = 511, sourcing 10 mA V

– 0.3 V

– 0.15 V

OUT5, 8 output swing: low Code = 0, sinking 10 mA 0.05 0.3 V

OUT6, 7 output swing: high Code = 511, sourcing 10 mA V

– 0.5 V

– 0.15 V

OUT6, 7 output swing: low Code = 0, sinking 10 mA 0.05 0.5 V

COM

output swing: high

(1)

Code = 960, sourcing 400 mA 13 15.3 V

COM

output swing: low

(1)

Code = 0, sinking 400 mA 3.8 5 V

vs Temperature Code = 0, sinking 400 mA 6 V

COM

slew rate

(2)

LOAD

= 60 Ω, C

LOAD

= 100 pF 45 V/μs

Continuous output current Note

(3)

30 mA

Output accuracy, V

COM

(4)

Code = 512 ±20 ±50 mV

vs Temperature Code = 512 ±25 μV/°C

Output accuracy, OUT1 to OUT4 Code = 768, V

= 9 V, V

= 18 V ±20 ±50 mV

vs Temperature Code = 768 ±25 μV/°C

Output accuracy, OUT5 to OUT8 Code = 256, V

= 9 V, V

= 18 V ±20 ±50 mV

vs Temperature Code = 256 ±25 μV/°C

Integral nonlinearity

(4)

INL 0.3 LSB

Differential nonlinearity

(4)

DNL 0.3 LSB

OUT1 to OUT4 code = 768, I

OUT

= +5-mA to –5-mA step 0.5 1.5 mV/mA

Load regulation REG

OUT5 to OUT8 code = 256, I

OUT

= +5-mA to –5-mA step 0.5 1.5 mV/mA

OTP MEMORY

Number of OTP write cycles 16 Cycles

Memory retention 100 Years

ANALOG POWER SUPPLY

Operating range 9 20 V

OUT1 to OUT4 set code = 768,

Total analog supply current I

6.9 11 mA

OUT5 to OUT8 set code = 256, no load

Over temperature 11 mA

DIGITAL

Logic 1 input voltage V

0.7 × V

Logic 0 input voltage V

0.3 × V

Logic 0 output voltage V

SINK

= 3-mA 0.15 0.4 V

Input leakage ±0.01 ±10 μA

Standard/Fast mode 400 kHz

Clock frequency f

CLK

High-Speed mode 3.4 MHz

DIGITAL POWER SUPPLY

Specified range DV

2.0 5.5 V

Digital supply current

(3)

Outputs at reset values, no load, two-wire bus inactive 115 180 μA

Over temperature 115 180 μA

(1) The BUF08630 V

COM

DAC limits can be programmed. These default limits apply if the device is not programmed. See the

Programmable Vcom Limits section.

(2) See Figure 19, Large-Signal Step Response, V

COM

(3) Observe maximum power dissipation.

(4) The V

COM

output voltage is limited to codes 0 to 960 because of the common-mode input range of the V

COM

amplifier. This limitation is

for V

COM

only; it does not affect DAC OUT1 to 8.

Product Folder Links: BUF08630

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