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TI-BUF01900.pdf
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TI-BUF01900.pdf
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FEATURES
D 10-BIT RESOLUTION
D RAIL-TO-RAIL OUTPUT
D ONBOARD NONVOLATILE MEMORY
D I
OUT
: 100mA
D LOW SUPPLY CURRENT: 900µA
D SUPPLY VOLTAGE: 7V to 18V
D DIGITAL SUPPLY: 2.0V to 5.5V
D INDUSTRY-STANDARD, TWO-WIRE
INTERFACE
D HIGH ESD RATING:
2kV HBM, 500V CDM
APPLICATIONS
D LCD PANEL V
COM
CALIBRATION
D LCD PANEL BRIGHTNESS AND CONTRAST
CONTROL
D POTENTIOMETER REPLACEMENT
D MOTOR DRIVE
D PROGRAMMABLE POWER SUPPLY
D PROGRAMMABLE OFFSET ADJUSTMENT
D ACTUATOR CONTROL
BUF01900, BUF01901 RELATED PRODUCTS
FEATURES PRODUCT
22V High Supply Voltage Gamma Buffers BUF11705
12--Channel Programmable Buffer, 10-Bit, V
COM
BUF12800
20-Channel Programmable Buffer, 10-Bit, V
COM
BUF20800
16-Channel Programmable Buffer with Memory BUF16820
20-Channel Programmable Buffer with Memory BUF20820
DESCRIPTION
The BUF01900 and BUF01901 provide a programmable
voltage output with 10-bit resolution. Programming of the
output occurs through an industry-standard, two-wire
serial interface. Once the correct V
COM
voltage is
established it can easily be stored into the integrated
nonvolatile memory.
An initial output voltage and adjustment range can be set
by an external resistor-divider. With its large output current
capability (up to 100mA), the BUF01900 and BUF01901
are ideally suited as programmable V
COM
calibrators in
LCD panels.
The BUF01901 has the digital-to-analog converter (DAC)
output brought out directly. It has a slightly lower cost than
the BUF01900, and works very well with the integrated
V
COM
in traditional gamma buffers such as the BUFxx702,
BUFxx703, BUFxx704 and BUF11705.
The BUF01900 and BUF01901 are both available in
TSSOP-8 and 3mm x 3mm DFN-10 packages. The
DFN-10 package (only 0.9mm in height) is especially
well-suited for notebook computers. Both devices are
specified from −40°C to +85°C.
Analog
7V to 18V
Digital
2V to 5.5V
BIAS
SDA
Input Control Logic
SCL A0
10−Bit
DAC
4xOTP
ROM
Switch
Control
Vol tage
Regulator
Program Command
BUF01900
250k
Ω
Buffer
V
COM
BUF01900
BUF01901
SBOS337A − OCTOBER 2006 − REVISED OCTOBER 2006
Programmable Voltage Source
with Memory
! !
www.ti.com
Copyright 2006, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a registered trademark of Texas Instruments. All other trademarks are the property of their respective owners.
"#$%&$$
"#$%&$%
SBOS337A − OCTOBER 2006 − REVISED OCTOBER 2006
www.ti.com
2
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
(1)
Supply Voltage, V
S
+20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltage, V
SD
+6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Signal Input Terminals,
BIAS:
Voltage −0.5V to V
S
+0.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SCL, SDA, A0, A1:
Voltage −0.5V to +6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current ±10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Short Circuit
(2)
Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature −40°C to +95°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature −65°C to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ESD Rating:
Human Body Model (HBM) 2000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Charged-Device Model (CDM) 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is
not supported.
(2)
Short-circuit to ground.
ORDERING INFORMATION
(1)
PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR PACKAGE MARKING
BUF01900 DFN-10 DRC BOO
BUF01900 TSSOP-8 PW F01900
BUF01901 DFN-10 DRC BOP
BUF01901 TSSOP-8 PW F01901
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site
at www.ti.com.
PIN CONFIGURATIONS
NC = No connection
V
S
V
COM
BIAS
GND
DGND
SDA
SCL
A0
A1
V
SD
1
2
3
4
5
10
9
8
7
6
Exposed
Thermal
Die Pad
on
Underside
DFN−10
BUF01900
V
S
NC
BIAS
GND
DGND
SDA
SCL
A0
A1
V
SD
1
2
3
4
5
10
9
8
7
6
Exposed
Thermal
Die Pad
on
Underside
DFN−10
BUF01901
V
S
V
COM
BIAS
GND
SDA
SCL
A0
V
SD
1
2
3
4
8
7
6
5
BUF01900
TSSOP−8
V
S
NC
BIAS
GND
SDA
SCL
A0
V
SD
1
2
3
4
8
7
6
5
BUF01901
TSSOP−8
"#$%&$$
"#$%&$%
SBOS337A − OCTOBER 2006 − REVISED OCTOBER 2006
www.ti.com
3
ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, T
A
= −40°C to +85°C.
At T
A
= +25°C, V
S
= 18V, V
SD
= 5V, R
L
= 1.5kΩ connected to ground, and C
L
= 200pF, unless otherwise noted.
BUF01900, BUF01901
PARAMETER CONDITIONS MIN TYP MAX UNIT
ANALOG
V
COM
Output Swing
(1)
Sourcing 10mA, Code 1023 17.7 17.8 V
Sinking 10mA, Code 00 0.6 1 V
Sourcing 100mA, Code 1023 15 16 V
Sinking 100mA, Code 00 0.75 1 V
V
COM
Output Reset and Power-Up Value
(1)
OTP not programmed, Code 512 V
S
/2 V
Nominal V
BIAS
Output Impedance No Load on V
BIAS
, V
COM
250 kΩ
Program to Out Delay t
D
5 µs
Output Accuracy 1V < V
COM
< 17.7 20 50 mV
Load Regulation REG V
OUT
= V
S
/2, I
OUT
= +50mA to −50mA Step 0.5 1.5 mV/mA
V
COM
(1)
Offset ±5 ±25 mV
Offset Drift −25°C to +100°C 5 µV/°C
Common-Mode Range 0.8 to 18 V
Common-Mode Rejection CMR 0.8V < V
IN
< 17.9V 85 dB
Slew Rate 5 V/µs
V
BIAS
No Load on V
BIAS
Integral Nonlinearity INL 0.1 2 LSB
Differential Nonlinearity DNL 0.1 2 LSB
Gain Error 0.1 1 %FSC
Accuracy 20 50 mV
ANALOG POWER SUPPLY
Operating Range
(2)
V
S
7 18 V
Total Analog Supply Current I
S
Output at Reset Values, No Load 0.9 1.5 mA
over Temperature 1.5 mA
DIGITAL
Logic 1 Input Voltage V
IH
0.7 × V
SD
V
Logic 0 Input Voltage V
IL
0.3 × V
SD
V
Logic 0 Output Voltage V
OL
I
SINK
= 3mA 0.15 0.4 V
Input Leakage ±0.01 ±10 µA
Clock Frequency f
CLK
Standard/Fast Mode 400 kHz
High-Speed Mode 3.4 MHz
DIGITAL POWER SUPPLY
Operating Voltage Range V
SD
2.0 5.5 V
Digital Supply Current
(2)
I
SD
25 50 µA
over Temperature 100 µA
TEMPERATURE
Specified Temperature Range −40 +85 °C
Operating Temperature Range Junction Temperature < 125°C −40 +95 °C
Storage Temperature Range −65 +150 °C
Thermal Resistance q
JA
TSSOP-8 150 °C/W
DFN-10 47 °C/W
(1)
BUF01900 only.
(2)
Minimum analog supply voltage is 8.5V when programming OTP memory.
"#$%&$$
"#$%&$%
SBOS337A − OCTOBER 2006 − REVISED OCTOBER 2006
www.ti.com
4
TYPICAL CHARACTERISTICS
At T
A
= +25°C, V
S
= 18V, V
SD
= 5V, R
L
= 1.5kΩ connected to ground, and C
L
= 200pF, unless otherwise noted.
Figure 1
1.5
1.0
0.5
0
Analog Supply Current (mA)
ANALOG SUPPLY CURRENT vs TEMPERATURE
−
40
−
20 0 10040 60 8020
Temperature (
_
C)
V
SD
=8V
V
S
= 18V
Figure 2
50
40
30
20
10
0
Digital Supply Current (
µ
A)
DIGITAL SUPPLY CURRENT vs TEMPERATURE
−
40
−
20 0 10040 60 8020
Temperature (
_
C)
V
SD
=5V
V
SD
=2V
Figure 3
25
20
15
10
5
0
−5
−10
−15
−20
−
25
V
OS
(mV)
BUFFER OFFSET VOLTAGE vs TEMPERATURE
(V
S
=18V,V
SD
=5V)
−40 −20 0 10040 60 8020
Temperature (_C)
PDS limits are ±25mV
Figure 4
20
18
16
14
12
10
8
6
4
2
0
V
OUT
(V)
OUTPUT VOLTAGE vs OUTPUT CURRENT
0 25 10050 75
I
OUT
(mA)
Sourcing, Code = 3FFh
V
S
= 18V
Sinking, Code = 000h
Figure 5
1.5
1.0
0.5
0
−
0.5
−
1.0
−
1.5
INL Error (LSB)
INTEGRAL NONLINEARITY ERROR vs INPUT CODE
0 128 256 384 512 1024
Input Code
640 768 896
10 Typical Units Shown
Figure 6
DNL Error (LSB)
DIFFERENTIAL NONLINEARITY ERROR
vs INPUT CODE
1.5
1.0
0.5
0
−
0.5
−
1.0
−
1.5
0 128 256 384 512 1024
Input Decimal Code
640 768 896
10 Typical Units Shown
"#$%&$$
"#$%&$%
SBOS337A − OCTOBER 2006 − REVISED OCTOBER 2006
www.ti.com
5
TYPICAL CHARACTERISTICS (cont)
At T
A
= +25°C, V
S
= 18V, V
SD
= 5V, R
L
= 1.5kΩ connected to ground, and C
L
= 200pF, unless otherwise noted.
Figure 7
5V/div
V
COM
BUFFER SLEW RATE
Time (1
µ
s/div)
1 2
(1) V
BIAS
(2) V
COM
Figure 8
5V/div
BUFFER LARGE SIGNAL STEP RESPONSE
Time (1
µ
s/div)
1 2
(1) V
BIAS
(2) V
COM
Figure 9
100mA/div500mV/div
LOAD REGULATION vs CAPACITANCE
Time (1
µ
s/div)
1
C=0.1
µ
F
C=10
µ
F
C=1
µ
F
2.7nF
C
1
Figure 10
100mA/div500mV/div
LOAD REGULATION vs CAPACITANCE
Time (1
µ
s/div)
1
2
C=1
µ
F
C=10
µ
F
C=0.1
µ
F
C=10
µ
F
C=1
µ
F
10
Ω
1
2.7nF
C
2
Figure 11
20mV/div 100mA/div
LOAD REGULATION WITH 100
µ
F CAPACITOR
Time (1
µ
s/div)
1
2.7nF
100
µ
F
1
Figure 12
50mV/div 100mA/div
LOAD REGULATION WITH 10
µ
FCAPACITOR
Time (1
µ
s/div)
1
2.7nF
10
µ
F
1
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