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【TI-DRV10866】是一款专为低噪声、低外部元件数量的三相无传感器直流无刷(BLDC)电机驱动设计的集成电路。该芯片具备集成的功率MOSFET,能够提供高达680mA的峰值输出电流,并在待机模式下拥有超低静态电流,仅为5µA(典型值)。这使得它非常适合用于风扇电机驱动应用,如笔记本CPU风扇、游戏站CPU风扇以及ASIC冷却风扇等。 DRV10866的核心特性包括其1.65V至5.5V的输入电压范围,以及内置的过电流保护功能,无需额外的电流感应电阻。它采用了超低RDSon的驱动器H+L结构,总RDSon仅为900mΩ,确保高效能的电机驱动。该芯片还支持150°整流,同步整流PWM操作,提高了效率,并通过开漏输出端FG或½FG来指示电机速度。 此外,DRV10866配备了无传感器的私有BEMF控制系统,允许在15kHz至50kHz的PWMIN输入范围内工作,实现精准的电机控制。同时,它具备锁定检测(DSC)功能,以及欠压闭锁(UVLO)保护,确保了设备在各种工作条件下的稳定性。该器件采用10引脚、3mm x 3mm x 0.75mm的高效散热型SON封装,工作温度范围为-40°C至125°C。 在应用实施方面,DRV10866的数据手册提供了详细的电路配置和功能描述,包括功能描述、应用范围、以及典型的电路应用示例,帮助设计者快速理解和集成此驱动器到他们的系统中。生产数据信息确保了产品符合德州仪器的标准保修条款,但生产过程中可能并不涵盖所有参数的测试。 DRV10866是面向低噪声、高效率三相无刷电机驱动应用的理想选择,其集成的保护功能和优化的性能参数使其在多种电子设备的散热解决方案中表现出色。
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DRV10866
ZHCSAG8A –NOVEMBER 2012–REVISED MARCH 2015
DRV10866 5V、、三三相相无无传传感感器器、、无无刷刷直直流流 (BLDC) 电电机机驱驱动动器器
1 特特性性 3 说说明明
1
• 输入电压范围:1.65V 至 5.5V
DRV10866 是一款具有集成功率金属氧化物半导体场
效应晶体管 (MOSFET) 的三相无传感器电机驱动器,
• 六个峰值输出电流为 680mA 的集成金属氧化物半
导体场效应晶体管 (MOSFET)
驱动电流峰值可达 680mA。 DRV10866 专门针对低噪
• 超低静态电流:待机模式下为 5µA(典型值)
声和低外部元件数风扇电机驱动应用而设计。
• 总体驱动器 H+L R
DSOn
900mΩ
DRV10866 具有内置过电流保护,无需外部电流感测
• 无传感器私有 BMEF 控制系统配置
电阻。 同步整流运行模式可提高电机驱动器应用的效
• 150°整流
率。 DRV10866 通过开漏输出端输出 FG 或 ½ FG
• 同步整流脉宽调制 (PWM) 操作
以指示电机速度。 该器件实现了适合三相电机的 150°
• 可选 FG 和 ½ FG 开漏输出
无传感器反电动势 (BEMF) 控制方案。 DRV10866 采
• 15kHz 至 50kHz 的 PWM
IN
输入
用 10 引脚、3mm × 3mm × 0.75mm 高效散热型 SON
• 锁定检测
(DSC) 封装。 额定工作温度为 –40°C 至 125°C。
• 电压浪涌保护
器器件件信信息息
(1)
• 欠压闭锁 (UVLO)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
• 热关断
DRV10866 WSON (10) 3.00mm x 3.00mm
(1) 要了解所有可用封装,请见数据表末尾的可订购产品附录。
2 应应用用范范围围
• 笔记本 CPU 风扇
• 游戏站 CPU 风扇
• ASIC 冷却风扇
DRV10866 典典型型应应用用
1
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
English Data Sheet: SBVS206
DRV10866
ZHCSAG8A –NOVEMBER 2012–REVISED MARCH 2015
www.ti.com.cn
目目录录
7.3 Feature Description................................................... 8
1 特特性性.......................................................................... 1
7.4 Device Functional Modes.......................................... 9
2 应应用用范范围围................................................................... 1
8 Application and Implementation ........................ 10
3 说说明明.......................................................................... 1
8.1 Application Information............................................ 10
4 修修订订历历史史记记录录 ........................................................... 2
8.2 Typical Application ................................................. 10
5 Pin Configuration and Functions......................... 3
9 Power Supply Recommendations...................... 14
6 Specifications......................................................... 4
10 Layout................................................................... 14
6.1 Absolute Maximum Ratings ...................................... 4
10.1 Layout Guidelines ................................................. 14
6.2 ESD Ratings.............................................................. 4
10.2 Layout Example .................................................... 14
6.3 Recommended Operating Conditions....................... 4
11 器器件件和和文文档档支支持持 ..................................................... 15
6.4 Thermal Information.................................................. 4
11.1 商标 ....................................................................... 15
6.5 Electrical Characteristics........................................... 5
11.2 静电放电警告......................................................... 15
6.6 Typical Characteristics.............................................. 6
11.3 术语表 ................................................................... 15
7 Detailed Description .............................................. 7
12 机机械械封封装装和和可可订订购购信信息息 .......................................... 15
7.1 Overview ................................................................... 7
7.2 Functional Block Diagram ......................................... 7
4 修修订订历历史史记记录录
Changes from Original (November 2012) to Revision A Page
• 已添加
引脚配置和功能
部分,ESD
额定值
表,
特性描述
部分,
器件功能模式
,
应用和实施
部分,
电源相关建议
部分,
布局
部分,
器件和文档支持
部分以及
机械、封装和可订购信息
部分........................................................................................ 1
2 Copyright © 2012–2015, Texas Instruments Incorporated
FG
COM
VCC
U
GND
PWM
CS
FGS
V
W
10
9
8
7
6
1
2
3
4
5
GND
Thermal Pad
(1)
DRV10866
www.ti.com.cn
ZHCSAG8A –NOVEMBER 2012–REVISED MARCH 2015
5 Pin Configuration and Functions
10-Pins WSON with Thermal Pad
DSC Package
Top View
(1) Thermal pad connected to ground.
Pin Functions
PIN
I/O DESCRIPTION
NAME NO.
COM 2 I Motor common terminal input
Overcurrent threshold setup pin. The constant current of the internal constant current source
flows through the resistor connected to this pin. The other side of the resistor is connected to
ground. The voltage across the resistor compares with the voltage converted from the
CS 9 I bottom MOSFET current. If the MOSFET current is high, the part enters the overcurrent
protection mode by turning off the top PWM MOSFET and holding the bottom MOSFET on. I
(mA) = 3120/R
CS
(kΩ).
Equation valid range: 300 mA < I
LIMIT
< 850 mA
Frequency generator output. If the FGS pin is connected to ground, the output has a period
FG 1 O equal to one electrical cycle (FG). If the FGS pin is connected to VCC, the output has a
period equal to two electrical cycles (1/2FG).
FG and 1/2FG control pin. Latched upon wake-up signal from the PWM pin. For details, refer
FGS 8 I
to Frequency Generator.
GND 5 — Ground pin
PWM input pin. The PWM input signal is converted to a fixed 156-kHz switching frequency
on the MOSFET driver. The PWM input signal resolution is less than 1%. This pin can also
control the device and put it in or out of standby mode. After the signal at the PWM stays low
PWM 10 I
(up to 500 µs), the device goes into low-power standby mode. Standby current is
approximately 5 µA. The rising edge of the PWM signal wakes up the device and puts it into
active mode, where it is ready to start to turn the motor.
U 4 O Phase U output
V 7 O Phase V output
Input voltage for motor and chip-supply voltage; the internal clamping circuit clamps the V
CC
VCC 3 I
voltage.
W 6 O Phase W output
Copyright © 2012–2015, Texas Instruments Incorporated 3
DRV10866
ZHCSAG8A –NOVEMBER 2012–REVISED MARCH 2015
www.ti.com.cn
6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted).
(1)
MIN MAX UNIT
VCC –0.3 6.0 V
CS, FGS, PWM –0.3 6.0 V
Input voltage
(2)
GND –0.3 0.3 V
COM –1.0 6.0 V
U, V, W –1.0 7.0 V
Output voltage
(2)
FG –0.3 6.0 V
Operating junction temperature, T
J
–40 125 °C
Temperature
Storage temperature, T
stg
–55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal unless otherwise noted.
6.2 ESD Ratings
VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±4000
V
(ESD)
Electrostatic discharge V
Charged-device model (CDM), per JEDEC specification JESD22- ±500
C101
(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted).
MIN MAX UNIT
Supply voltage VCC 1.65 5.5 V
U, V, W –0.7 6.5 V
FG, CS, FGS, COM –0.1 5.5 V
Voltage range
GND –0.1 0.1 V
PWM –0.1 5.5 V
Operating junction temperature, T
J
–40 125 °C
6.4 Thermal Information
DRV10866
THERMAL METRIC
(1)
DSC (WSON) UNIT
10 PINS
R
θJA
Junction-to-ambient thermal resistance 42.3
R
θJC(top)
Junction-to-case (top) thermal resistance 44.5
R
θJB
Junction-to-board thermal resistance 17.1
°C/W
ψ
JT
Junction-to-top characterization parameter 0.3
ψ
JB
Junction-to-board characterization parameter 17.3
R
θJC(bot)
Junction-to-case (bottom) thermal resistance 4.3
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
4 Copyright © 2012–2015, Texas Instruments Incorporated
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