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TI-TPS55340-EP.pdf
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TPS55340-EP 集成式 5A、40V 宽输入范围
升压/SEPIC/反激式直流/直流稳压器
1 特性
• 内部 5A,40V 低侧 MOSFET 开关
• 2.9V 至 32V 输入电压范围
• ±0.7% 基准电压
• 0.5mA 静态工作电流
• 2.7µA 关断电源电流
• 固定频率电流模式脉宽调制 (PWM) 控制
• 频率可在 100kHz 至 1.2MHz 之间调整
• 同步外部时钟功能
• 软启动时间可调节
• 用于在轻负载时实现较高效率的脉冲跳跃模式
• 逐周期电流限制、热关断和 UVLO 保护
• 支持国防、航天和医疗应用
– 受控基线
– 一个组装和测试基地
– 一个制造基地
– 支持军用(–55°C 至 125°C)温度范围
– 延长了产品生命周期
– 延长了产品变更通知
– 产品可追溯性
2 应用
• 3.3V、5V、12V、24V 功率转换
• 升压、SEPIC 和反激式拓扑结构
• 适用于平板电脑和便携式个人电脑的 Thunderbolt
端口、电源扩展坞
• 工业电源系统
• ADSL 调制解调器
3 说明
TPS55340-EP 是一款单片非同步开关稳压器,带有集
成的 5A/40V 电源开关。此器件可配置成多种标准开关
稳压器拓扑,包括升压、SEPIC 和隔离反激式。此器
件具有宽输入电压范围,可支持输入电压来自多节电池
或者稳压的 3.3V、5V、12V 和 24V 电源轨的应用。
TPS55340-EP 使用电流模式脉宽调制 (PWM) 控制来
调节输出电压,并具有一个内部振荡器。PWM 的开关
频率由一个外部电阻器设定或者通过与一个外部时钟信
号同步来设置。用户可以在 100kHz 至 1.2MHz 之间
对开关频率进行设定。
此器件具有可编程软启动功能,可限制启动期间的涌入
电流,并且还具有其他内置保护特性,包括逐周期过流
限制和热关断。
器件信息
订货编号
封装
(1)
封装尺寸(标称值)
TPS55340MRTETEP WQFN (16) 3.00mm × 3.00mm
(1) 要了解所有可用封装,请见数据表末尾的可订购产品附录。
TPS55340
VIN
EN
SW
SW
SW
FREQ
SS
COMP
SYNC
FB
PGND
PGND
PGND
V
IN
V
OUT
R
SL
R
SH
L
D
C
I
C
O
R
FREQ
C
SS
R
C
C
C
AGND
典型应用(升压)
50
55
60
65
70
75
80
85
90
95
100
0 0.4 0.8 1.2 1.6 2 2.4
Output Current (A)
Efficiency (%)
V
IN
= 15 V
V
IN
= 12 V
V
IN
= 5 V
V
OUT
= 24 V
f
SW
= 600 kHz
G031
效率与输出电流间的关系
TPS55340-EP
ZHCSCL9A – JULY 2014 – REVISED SEPTEMBER 2021
本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLVSCG7
Table of Contents
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 说明(续).........................................................................3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings........................................ 4
7.2 Handling Ratings.........................................................4
7.3 Recommended Operating Conditions.........................4
7.4 Thermal Information....................................................4
7.5 Electrical Characteristics.............................................5
7.6 Typical Characteristics................................................6
8 Detailed Description........................................................9
8.1 Overview..................................................................... 9
8.2 Functional Block Diagram........................................... 9
8.3 Feature Description...................................................10
8.4 Device Functional Modes..........................................13
9 Application and Implementation.................................. 14
9.1 Application Information............................................. 14
9.2 Typical Applications.................................................. 14
10 Power Supply Recommendations..............................28
11 Layout...........................................................................29
11.1 Layout Guidelines................................................... 29
11.2 Layout Examples.....................................................29
12 Device and Documentation Support..........................31
12.1 Device Support....................................................... 31
12.2 接收文档更新通知................................................... 31
12.3 支持资源..................................................................31
12.4 Trademarks.............................................................31
12.5 Electrostatic Discharge Caution..............................31
12.6 术语表..................................................................... 31
13 Mechanical, Packaging, and Orderable
Information.................................................................... 31
4 Revision History
Changes from Revision * (July 2014) to Revision A (September 2021) Page
• 更新了整个文档中的表格、图和交叉参考的编号格式......................................................................................... 1
TPS55340-EP
ZHCSCL9A – JULY 2014 – REVISED SEPTEMBER 2021
www.ti.com.cn
2 Submit Document Feedback
Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: TPS55340-EP
5 说明(续)
5A 40V TPS55340-EP 升压转换器与 3A 40V TPS61175 引脚到引脚兼容,并且将最大输入电压范围从 18V 扩展
至 32V。
6 Pin Configuration and Functions
PowerPAD
16
SS
EN
VIN
SW
FREQ
NC
PGND
PGND
SW
SW
NC
PGND
SYNC
AGND
COMP
FB
15 14 13
5
6 7 8
1
2
3
4
12
11
10
9
图 6-1. 16-Pin WQFN RTE Package (Top View)
表 6-1. Pin Functions
PIN
DESCRIPTION
NAME NO.
AGND 6 Signal ground of the IC
COMP 7
Output of the transconductance error amplifier. An external RC network connected to this pin compensates the
regulator feedback loop.
EN 3 Enable pin. When the voltage of this pin falls below the enable threshold for more than 1 ms, the IC turns off.
FB 8
Error amplifier input and feedback pin for positive voltage regulation. Connect to the center tap of a resistor divider to
program the output voltage.
FREQ 9
Switching frequency program pin. An external resistor connected between the FREQ pin and AGND sets the
switching frequency.
NC
10
Reserved pin that must be connected to ground
14
PGND
11
Power ground of the IC. It is connected to the source of the internal power MOSFET switch.12
13
PowerPAD 17
The PowerPAD
™
should be soldered to the AGND. If possible, use thermal vias to connect to internal ground plane
for improved power dissipation.
SS 4 Soft-start programming pin. A capacitor between the SS pin and AGND pin programs soft-start timing.
SW
1
SW is the drain of the internal power MOSFET. Connect SW to the switched side of the boost or SEPIC inductor or
the flyback transformer.
15
16
SYNC 5
Switching frequency synchronization pin. An external clock signal can be used to set the switching frequency
between 200 kHz and 1 MHz. If not used, this pin should be tied to AGND.
VIN 2
The input supply pin to the IC. Connect VIN to a supply voltage between 2.9 and 32 V. It is acceptable for the voltage
on the pin to be different from the boost power stage input.
www.ti.com.cn
TPS55340-EP
ZHCSCL9A – JULY 2014 – REVISED SEPTEMBER 2021
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
3
Product Folder Links: TPS55340-EP
7 Specifications
7.1 Absolute Maximum Ratings
over operating temperature (unless otherwise noted)
(1)
MIN MAX UNIT
Supply voltages on pin VIN
(2)
–0.3
34 V
Voltage on pin EN
(2)
–0.3
34 V
Voltage on pins FB, FREQ, and COMP
(2)
–0.3
3 V
Voltage on pin SS
(2)
–0.3
5 V
Voltage on pin SYNC
(2)
–0.3
7 V
Voltage on pin SW
(2)
–0.3
40 V
Operating junction temperature
–55
150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground pin
7.2 Handling Ratings
MIN MAX UNIT
T
stg
Storage temperature range
–65
150 °C
V
(ESD)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
(1)
–2000
2000
V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins
(2)
–500
500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
MIN NOM MAX UNIT
V
IN
Input voltage 2.9 32 V
V
OUT
Output voltage V
IN
38 V
V
EN
EN voltage 0 32 V
V
SYN
External switching frequency logic input 0 5 V
T
A
Operating free-air temperature
–55
125 °C
T
J
Operating junction temperature
–55
150 °C
7.4 Thermal Information
THERMAL METRIC
(1)
TPS55340-EP
UNIT
WQFN (16 PINS)
R
θ
JA
Junction-to-ambient thermal resistance 43.3
°C/W
R
θ
JC(top)
Junction-to-case (top) thermal resistance 38.7
R
θ
JB
Junction-to-board thermal resistance 14.5
ψ
JT
Junction-to-top characterization parameter 0.4
ψ
JB
Junction-to-board characterization parameter 14.5
R
θ
JC(bot)
Junction-to-case (bottom) thermal resistance 3.5
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
TPS55340-EP
ZHCSCL9A – JULY 2014 – REVISED SEPTEMBER 2021
www.ti.com.cn
4 Submit Document Feedback
Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: TPS55340-EP
7.5 Electrical Characteristics
Vin = 5 V, T
J
= –55°C to 150°C, unless otherwise noted. Typical values are at T
J
= 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
V
IN
Input voltage 2.9 32 V
I
Q
Operating quiescent current into Vin Device nonswitching, V
FB
= 2 V 0.5 mA
I
SD
Shutdown current EN = GND 2.7 10 µA
V
UVLO
Undervoltage lockout threshold V
IN
falling 2.5 2.7 V
V
hys
Undervoltage lockout hysteresis 120 140 160 mV
ENABLE AND REFERENCE CONTROL
V
EN
EN threshold voltage EN rising input 0.9 1.08 1.30 V
V
ENh
EN threshold hysteresis 0.1 0.16 0.22 V
R
EN
EN pulldown resistor 400 950 1600
kΩ
T
off
Shutdown delay, SS discharge EN high to low 1.0 ms
V
SYNh
SYN logic high voltage 1.2
V
SYNl
SYN logic low voltage 0.4 V
VOLTAGE AND CURRENT CONTROL
V
REF
Voltage feedback regulation voltage 1.204 1.229 1.254 V
I
FB
Voltage feedback input bias current 1.6 30 nA
I
sink
Comp pin sink current V
FB
= V
REF
+ 200 mV, V
COMP
= 1 V 42 µA
I
source
Comp pin source current
V
FB
= V
REF
– 200 mV, V
COMP
= 1 V
42 µA
V
CCLP
Comp pin clamp voltage
High Clamp, V
FB
= 1 V
Low Clamp, V
FB
= 1.5 V
3.1
0.75
V
V
CTH
Comp pin threshold Duty cycle = 0% 1.04 V
G
ea
Error amplifier transconductance 240 360 440 µmho
R
ea
Error amplifier output resistance 10
MΩ
ƒ
ea
Error amplifier crossover frequency 500 kHz
FREQUENCY
ƒ
SW
Frequency
R
FREQ
= 480 kΩ
75 94 130
kHz
R
FREQ
= 80 kΩ
460 577 740
R
FREQ
= 40 kΩ
920 1140 1480
D
max
Maximum duty cycle
V
FB
= 1 V, R
FREQ
= 80 kΩ
89% 96%
V
FREQ
FREQ pin voltage 1.25 V
T
min_on
Minimum on pulse width
R
FREQ
= 80 kΩ
77 ns
POWER SWITCH
R
DS(ON)
N-channel MOSFET on-resistance
V
IN
= 5 V
V
IN
= 3 V
60
70
110
120
mΩ
I
LN_NFET
N-channel leakage current V
DS
= 25 V 2.1 µA
OCP and SS
I
LIM
N-channel MOSFET current limit D = D
max
5.25 6.6 8.25 A
I
SS
Soft-start bias current Vss = 0 V 6 µA
THERMAL SHUTDOWN
T
shutdown
Thermal shutdown threshold 165 °C
T
hysteresis
Thermal shutdown threshold hysteresis 15 °C
www.ti.com.cn
TPS55340-EP
ZHCSCL9A – JULY 2014 – REVISED SEPTEMBER 2021
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
5
Product Folder Links: TPS55340-EP
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