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TPS51200

REFIN

VLDOIN

PGND

VOSNS

VIN

PGOOD

GND

REFOUT

3.3 V

PGOOD

SLP_S3

VTTREF

VLDOIN

DDQ

Product

Folder

Sample &

Buy

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Community

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

English Data Sheet: SLUSA48

TPS51200-EP

ZHCSF57 –JUNE 2016

TPS51200-EP 灌灌/拉拉 DDR 终终端端稳稳压压器器

1 特特性性

• 输入电压：支持 2.5V 和 3.3V 电源轨

• VLDOIN 电压范围：1.1V 至 3.5V

• 具有压降补偿功能的灌电流和拉电流终端稳压器

• 所需最小输出电容为 20μF（通常为 3 × 10μF

MLCC），用于存储器终端应用 (DDR)

• 用于监视输出稳压的 PGOOD

• EN 输入

• REFIN 输入允许直接或通过电阻分压器灵活进行输

入跟踪

• 远程感测 (VOSNS)

• ±10mA 缓冲基准 (REFOUT)

• 内置软启动，欠压锁定 (UVLO) 和过流限制 (OCL)

• 热关断

• 符合 DDR 和 DDR2 JEDEC 规范

• 支持 DDR3、低功耗 DDR3 和 DDR4 VTT 应用

• 带有散热焊盘的 10 引脚超薄小外形尺寸无引线

(VSON) 封装

• 支支持持国国防防、、航航天天和和医医疗疗应应用用

– 受控基线

– 一个组装和测试场所

– 一个制造场所

– 支持军用温度范围（-55°C 至 125°C）

– 延长的产品使用寿命周期

– 延长的产品变更通知

– 产品可追溯性

2 应应用用范范围围

• 用于 DDR、DDR2、DDR3、低功耗 DDR3 和

DDR4 的存储器终端稳压器

• 笔记本、台式机和服务器

• 电信和数据通信

• 基站

• 液晶 (LCD) 电视和等离子 (PDP) 电视

• 复印机和打印机

• 机顶盒

3 说说明明

TPS51200-EP 器件是一款灌电流和拉电流双倍数据速

率 (DDR) 终端稳压器，专用于空间问题是重要考量因

素的低输入电压、低成本、低噪声系统。

TPS51200-EP 能够保持快速瞬态响应，最低仅需

20μF 输出电容。TPS51200-EP 支持远程感测功能并

且可满足 DDR、DDR2、DDR3、低功耗 DDR3 和

DDR4 VTT 总线的所有电源要求。

此外，TPS51200-EP 还提供一个开漏 PGOOD 信号

监测输出稳压，提供一个 EN 信号在 S3（挂起至

RA4M）期间针对 DDR 进行 VTT 放电。

TPS51200-EP 采用带散热焊盘的高效散热型 10 引脚

超薄小外形尺寸无引线 (VSON) 封装，无铅且绿色环

保。其额定工作温度范围为 -55°C 至 +125°C。

器器件件信信息息

(1)

器器件件型型号号封封装装封封装装尺尺寸寸（（标标称称值值））

TPS51200-EP VSON (10) 3.00mm x 3.00mm

(1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。

简简化化的的 DDR 应应用用

TPS51200-EP

ZHCSF57 –JUNE 2016

www.ti.com.cn

目目录录

1 特特性性.......................................................................... 1

2 应应用用范范围围................................................................... 1

3 说说明明.......................................................................... 1

4 修修订订历历史史记记录录 ........................................................... 2

5 Pin Configuration and Functions......................... 3

6 Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 4

6.5 Electrical Characteristics........................................... 5

6.6 Typical Characteristics.............................................. 7

7 Detailed Description............................................ 10

7.1 Overview ................................................................. 10

7.2 Functional Block Diagram ....................................... 10

7.3 Feature Description................................................. 10

7.4 Device Functional Modes........................................ 13

8 Application and Implementation ........................ 14

8.1 Application Information............................................ 14

8.2 Typical VTT DIMM Applications.............................. 14

8.3 System Examples ................................................... 19

9 Power Supply Recommendations...................... 25

10 Layout................................................................... 25

10.1 Layout Guidelines ................................................. 25

10.2 Layout Example .................................................... 26

10.3 Thermal Design Considerations............................ 26

11 器器件件和和文文档档支支持持 ..................................................... 28

11.1 器件支持................................................................ 28

11.2 文档支持 ............................................................... 28

11.3 接收文档更新通知 ................................................. 28

11.4 社区资源................................................................ 28

11.5 商标 ....................................................................... 28

11.6 静电放电警告......................................................... 28

11.7 Glossary................................................................ 29

12 机机械械、、封封装装和和可可订订购购信信息息....................................... 29

4 修修订订历历史史记记录录

日日期期修修订订版版本本注注释释

2016 年 6 月 * 最初发布。

TPS51200-EP

ZHCSF57 –JUNE 2016

www.ti.com.cn

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to the network ground terminal unless otherwise noted.

6 Specifications

6.1 Absolute Maximum Ratings

over operating junction temperature range (unless otherwise noted)

(1)

MIN MAX UNIT

Input voltage

(2)

REFIN, VIN, VLDOIN, VOSNS –0.3 3.6

VEN –0.3 6.5

PGND to GND –0.3 0.3

Output voltage

(2)

REFOUT, VO –0.3 3.6

PGOOD –0.3 6.5

Operating junction temperature, T

–55 150 °C

Storage temperature, T

stg

–55 150 °C

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE UNIT

(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001

(1)

±2000

Charged device model (CDM), per JEDEC specification JESD22-C101

(2)

±500

6.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)

MIN NOM MAX UNIT

Supply voltages VIN 2.375 3.5 V

Voltage

EN, VLDOIN, VOSNS –0.1 3.5

REFIN 0.5 1.8

PGOOD, VO –0.1 3.5

REFOUT –0.1 1.8

PGND –0.1 0.1

Operating junction temperature, T

–55 125 °C

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information

THERMAL METRIC

(1)

TPS51200-EP

UNITDRC (VSON)

10 PINS

θJA

Junction-to-ambient thermal resistance 55.6 °C/W

θJC(top)

Junction-to-case (top) thermal resistance 84.6 °C/W

θJB

Junction-to-board thermal resistance 30 °C/W

Junction-to-top characterization parameter 5.5 °C/W

Junction-to-board characterization parameter 30.1 °C/W

θJC(bot)

Junction-to-case (bottom) thermal resistance 10.9 °C/W

TPS51200-EP

www.ti.com.cn

ZHCSF57 –JUNE 2016

(1) Ensured by design. Not production tested.

6.5 Electrical Characteristics

Over recommended junction temperature range, V

VIN

= 3.3 V, V

VLDOIN

= 1.8 V, V

REFIN

= 0.9 V, V

VOSNS

= 0.9 V, V

= V

VIN

OUT

= 3 × 10 μF and circuit shown in (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

SUPPLY CURRENT

Supply current T

= 25 °C, V

= 3.3 V, no load 0.7 1 mA

IN(SDN)

Shutdown current

= 25 °C, V

= 0 V, V

REFIN

= 0,

no load

65 80

μA

= 25 °C, V

= 0 V, V

REFIN

> 0.4 V, no

load

200 400

LDOIN

Supply current of VLDOIN T

= 25 °C, V

= 3.3 V, no load 1 50 μA

LDOIN(SDN)

Shutdown current of VLDOIN T

= 25 °C, V

= 0 V, no load 0.1 50 μA

INPUT CURRENT

REFIN

Input current, REFIN V

= 3.3 V 1 μA

VO OUTPUT

VOSNS

Output DC voltage, VO

REFOUT

= 1.25 V (DDR1), I

= 0 A

1.25 V

–15 15 mV

REFOUT

= 0.9 V (DDR2), I

= 0 A

0.9 V

–15 15 mV

LDOIN

= 1.5 V, V

REFOUT

= 0.75 V (DDR3),

= 0 A

0.75 V

–15 15 mV

VOTOL

Output voltage tolerance to REFOUT –2 A < I

< 2 A –25 25 mV

VOSRCL

VO source current Limit

With reference to REFOUT,

OSNS

= 90% × V

REFOUT

3 4.5 A

VOSNCL

VO sink current Limit

With reference to REFOUT,

OSNS

= 110% × V

REFOUT

3.5 5.5 A

DSCHRG

Discharge current, VO

REFIN

= 0 V, V

= 0.3 V, V

= 0 V, T

25°C

18 25 Ω

POWERGOOD COMPARATOR

TH(PG)

VO PGOOD threshold

PGOOD window lower threshold with

respect to REFOUT

–23.5% –20% –17.5%

PGOOD window upper threshold with

respect to REFOUT

17.5% 20% 23.5%

PGOOD hysteresis 5%

PGSTUPDLY

PGOOD start-up delay

Start-up rising edge, VOSNS within 15%

of REFOUT

2 ms

PGOODLOW

Output low voltage I

SINK

= 4 mA 0.4 V

PBADDLY

PGOOD bad delay

VOSNS is outside of the ±20% PGOOD

window

10 μs

PGOODLK

Leakage current

(1)

OSNS

= V

REFIN

(PGOOD high

impedance), V

PGOOD

= V

VIN

+ 0.2 V

1 μA

REFIN AND REFOUT

REFIN

REFIN voltage range 0.5 1.8 V

REFINUVLO

REFIN undervoltage lockout REFIN rising 360 390 420 mV

REFINUVHYS

REFIN undervoltage lockout hysteresis 20 mV

REFOUT

REFOUT voltage REFIN V

REFOUTTOL

REFOUT voltage tolerance to V

REFIN

–10 mA < I

REFOUT

< 10 mA,

REFIN

= 1.25 V

–15 15

–10 mA < I

REFOUT

< 10 mA,

VREFIN

= 0.9 V

–15 15

–10 mA < I

REFOUT

< 10 mA,

REFIN

= 0.75 V

–15 15

–10 mA < I

REFOUT

< 10 mA,

REFIN

= 0.6 V

–15 15

REFOUTSRCL

REFOUT source current limit V

REFOUT

= 0 V 10 40 mA

REFOUTSNCL

REFOUT sink current limit V

REFOUT

= 0 V 10 40 mA

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