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IPD80R2K0P7 英飞凌芯片 INFINEON 中文版规格书手册.pdf
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IPD80R2K0P7 英飞凌芯片 INFINEON 中文版规格书手册
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1
IPD80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
tab
1
2
3
DPAK
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMR
DS(on)
*E
oss
;reducedQ
g
,C
iss
,andC
oss
•Best-in-classDPAKR
DS(on)
•Best-in-classV
(GS)th
of3VandsmallestV
(GS)th
variationof±0.5V
•IntegratedZenerDiodeESDprotection
•Fullyqualifiedacc.JEDECforIndustrialApplications
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
@ T
j=25°C
800 V
R
DS(on),max
2.0 Ω
Q
g,typ
9 nC
I
D
3 A
E
oss
@ 500V 0.85 µJ
V
GS(th),typ
3 V
ESD class (HBM) 1C -
Type/OrderingCode Package Marking RelatedLinks
IPD80R2K0P7 PG-TO 252-3 80R2K0P7 see Appendix A
2
800VCoolMOSªP7PowerTransistor
IPD80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
800VCoolMOSªP7PowerTransistor
IPD80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
3
1.9
A
T
C
=25°C
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
- - 6.0 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 6 mJ I
D
=0.4A; V
DD
=50V
Avalanche energy, repetitive E
AR
- - 0.05 mJ I
D
=0.4A; V
DD
=50V
Avalanche current, repetitive I
AR
- - 0.4 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns V
DS
=0to400V
Gate source voltage V
GS
-20
-30
-
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation P
tot
- - 24 W T
C
=25°C
Operating and storage temperature T
j
,T
stg
-55 - 150 °C -
Continuous diode forward current I
S
- - 2.2 A T
C
=25°C
Diode pulse current
2)
I
S,pulse
- - 6.0 A T
C
=25°C
Reverse diode dv/dt
3)
dv/dt - - 1 V/ns V
DS
=0to400V,I
SD
<=0.47A,T
j
=25°C
Maximum diode commutation speed
3)
di
f
/dt - - 50 A/µs V
DS
=0to400V,I
SD
<=0.47A,T
j
=25°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case R
thJC
- - 5.1 °C/W -
Thermal resistance, junction - ambient R
thJA
- - 62 °C/W Device on PCB, minimal footprint
Thermal resistance, junction - ambient
for SMD version
R
thJA
- 35 45 °C/W
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm
2
(one
layer 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wave- & reflow
soldering allowed
T
sold
- - 260 °C reflow MSL1
1)
Limited by T
j max
. Maximum duty cycle D=0.5
2)
Pulse width t
p
limited by T
j,max
3)
V
DClink
=400V;V
DS,peak
<V
(BR)DSS
;identicallowsideandhighsideswitchwithidenticalR
G
;t
cond
<2µs
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