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IPD60R360CFD7 英飞凌芯片 INFINEON 中文版规格书手册.pdf
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IPD60R360CFD7 英飞凌芯片 INFINEON 中文版规格书手册
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1
IPD60R360CFD7
Rev.2.0,2019-06-04Final Data Sheet
tab
1
2
3
DPAK
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
600VCoolMOSªCFD7PowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe
successortotheCoolMOS™CFD2seriesandisanoptimizedplatform
tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge
(ZVS)andLLC.Resultingfromreducedgatecharge(Q
g
),best-in-class
reverserecoverycharge(Q
rr
)andimprovedturnoffbehaviorCoolMOS™
CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon’s
fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof
afastswitchingtechnologytogetherwithsuperiorhardcommutation
robustness,withoutsacrificingeasyimplementationinthedesign-in
process.TheCoolMOS™CFD7technologymeetshighestefficiencyand
reliabilitystandardsandfurthermoresupportshighpowerdensity
solutions.Altogether,CoolMOS™CFD7makesresonantswitching
topologiesmoreefficient,morereliable,lighterandcooler.
Features
•Ultra-fastbodydiode
•Lowgatecharge
•Best-in-classreverserecoverycharge(Q
rr
)
•ImprovedMOSFETreversediodedv/dtanddi
F
/dtruggedness
•LowestFOMR
DS(on)
*Q
g
andR
DS(on)
*E
oss
•Best-in-classR
DS(on)
inSMDandTHDpackages
Benefits
•Excellenthardcommutationruggedness
•Highestreliabilityforresonanttopologies
•Highestefficiencywithoutstandingease-of-use/performancetradeoff
•Enablingincreasedpowerdensitysolutions
Potentialapplications
SuiteableforSoftSwitchingtopologies
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,
Telecom,EVCharging
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
@ T
j,max
650 V
R
DS(on),max
360 mΩ
Q
g,typ
14 nC
I
D,pulse
24 A
E
oss
@ 400V 1.6 µJ
Body diode di
F
/dt 1300 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPD60R360CFD7 PG-TO 252-3 60R360F7 see Appendix A
2
600VCoolMOSªCFD7PowerTransistor
IPD60R360CFD7
Rev.2.0,2019-06-04Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
600VCoolMOSªCFD7PowerTransistor
IPD60R360CFD7
Rev.2.0,2019-06-04Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
7
5
A
T
C
=25°C
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
- - 24 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 29 mJ I
D
=2.0A; V
DD
=50V; see table 10
Avalanche energy, repetitive E
AR
- - 0.14 mJ I
D
=2.0A; V
DD
=50V; see table 10
Avalanche current, single pulse I
AS
- - 2.0 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns V
DS
=0...400V
Gate source voltage (static) V
GS
-20 - 20 V static;
Gate source voltage (dynamic) V
GS
-30 - 30 V AC (f>1 Hz)
Power dissipation P
tot
- - 43 W T
C
=25°C
Storage temperature T
stg
-55 - 150 °C -
Operating junction temperature T
j
-55 - 150 °C -
Mounting torque - - - - Ncm -
Continuous diode forward current I
S
- - 7 A T
C
=25°C
Diode pulse current
2)
I
S,pulse
- - 24 A T
C
=25°C
Reverse diode dv/dt
3)
dv/dt - - 70 V/ns
V
DS
=0...400V,I
SD
<=7A,T
j
=25°C
see table 8
Maximum diode commutation speed di
F
/dt - - 1300 A/µs
V
DS
=0...400V,I
SD
<=7A,T
j
=25°C
see table 8
Insulation withstand voltage V
ISO
- - n.a. V V
rms
,T
C
=25°C,t=1min
1)
Limited by T
j,max
.
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
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