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IPD60R650CE 英飞凌芯片 INFINEON 中文版规格书手册.pdf
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IPD60R650CE 英飞凌芯片 INFINEON 中文版规格书手册
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1
IPD60R650CE,IPA60R650CE
Rev.2.3,2018-04-10Final Data Sheet
tab
1
2
3
DPAK PG-TO220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson
thegateorseparatetotempolesisgenerallyrecommended.
Note2:*6R650CEisFullPAKmarkingonly
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
@ T
j,max
650 V
R
DS(on),max
650 mΩ
I
d.
9.9 A
Q
g.typ
20.5 nC
I
D,pulse
19 A
E
oss
@400V 1.9 µJ
Type/OrderingCode Package Marking RelatedLinks
IPD60R650CE PG-TO 252
IPA60R650CE PG-TO 220 FullPAK
60S650CE / 6R650CE* see Appendix A
2
600VCoolMOSªCEPowerTransistor
IPD60R650CE,IPA60R650CE
Rev.2.3, 20180410Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3
600VCoolMOSªCEPowerTransistor
IPD60R650CE,IPA60R650CE
Rev.2.3, 20180410Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
9.9
6.2
A
T
C
=25°C
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
- - 19 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 133 mJ I
D
=1.3A; V
DD
=50V; see table 11
Avalanche energy, repetitive E
AR
- - 0.20 mJ I
D
=1.3A; V
DD
=50V; see table 11
Avalanche current, repetitive I
AR
- - 1.3 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns V
DS
=0...480V
Gate source voltage (static) V
GS
-20 - 20 V static;
Gate source voltage (dynamic) V
GS
-30 - 30 V AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-25
P
tot
- - 82 W T
C
=25°C
Storage temperature T
stg
-40 - 150 °C -
Operating junction temperature T
j
-40 - 150 °C -
Continuous diode forward current I
S
- - 7 A T
C
=25°C
Diode pulse current
2)
I
S,pulse
- - 19 A T
C
=25°C
Reverse diode dv/dt
3)
dv/dt - - 15 V/ns
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C
see table 9
Maximum diode commutation speed di
f
/dt - - 500 A/µs
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C
see table 9
Power dissipation (FullPAK)
TO-220FP
P
tot
- - 28 W T
C
=25°C
Mounting torque (FullPAK)
TO-220FP
- - - 50 Ncm M2.5 screws
Insulation withstand voltage for
TO-220FP
V
ISO
- - 2500 V V
rms
,T
C
=25°C,t=1min
2Thermalcharacteristics
Table3Thermalcharacteristics(FullPAK)TO-220FP
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case R
thJC
- - 4.5 °C/W -
Thermal resistance, junction - ambient R
thJA
- - 80 °C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
T
sold
- - 260 °C 1.6mm (0.063 in.) from case for 10s
1)
Limited by T
j max
. TO252 equivalent, Maximum duty cycle D=0.50
2)
Pulse width t
p
limited by T
j,max
3)
IdenticallowsideandhighsideswitchwithidenticalR
G
2
4
600VCoolMOSªCEPowerTransistor
IPD60R650CE,IPA60R650CE
Rev.2.3, 20180410Final Data Sheet
Table4ThermalcharacteristicsTO-252
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case R
thJC
- - 1.52 °C/W -
Thermal resistance, junction - ambient R
thJA
- - 62 °C/W device on PCB, minimal footprint
Thermal resistance, junction - ambient
for SMD version
R
thJA
- 35 45 °C/W
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wave & reflow
soldering allowed
T
sold
- - 260 °C reflow MSL3
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