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IPD60R950C6 英飞凌芯片 INFINEON 中文版规格书手册.pdf
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IPD60R950C6 英飞凌芯片 INFINEON 中文版规格书手册
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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6600V
600VCoolMOS™C6PowerTransistor
IPx60R950C6
DataSheet
Rev.2.4
Final
PowerManagement&Multimarket
drain
pin 2
gate
pin 1
source
pin 3
600V CoolMOS™ C6 Power Transistor IPD60R950C6, IPB60R950C6
IPP60R950C6, IPA60R950C6
1 Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. CoolMOS™ C6 series combines the
experience of the leading SJ MOSFET supplier with high class innovation.
The resulting devices provide all benefits of a fast switching SJ MOSFET
while not sacrificing ease of use. Extremely low switching and conduction
losses make switching applications even more efficient, more compact,
lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC
1)
• Pb-free plating, Halogen free mold compound
Applications
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,
Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
1) J-STD20 and JESD22
Table 1 Key Performance Parameters
Parameter Value Unit
V
DS
@ T
j,max
650 V
R
DS(on),max
0.95 "
Q
g,typ
13 nC
I
D,pulse
12 A
E
oss
@ 400V 1.3 µJ
Body diode di/dt 500 A/µs
Type / Ordering Code Package Marking Related Links
IPD60R950C6 PG-TO252
!IFX C6 Product Brief
IPB60R950C6 PG-TO263 !IFX C6 Portfolio
IPP60R950C6 PG-TO220 6R950C6 !IFX CoolMOS Webpage
IPA60R950C6 PG-TO220 FullPAK !IFX Design tools
Rev. 2.4
Page 2
2018-03-05
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table of Contents
Rev. 2.4
Page 3
2018-03-05
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Maximum Ratings
FinalData Sheet
2 Maximum Ratings
at T
j
= 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
1)
1) Limited by T
j,max.
Maximum duty cycle D=0.75
I
D
- - 4.4 A T
C
= 25 °C
2.8 T
C
= 100°C
Pulsed drain current
2)
2) Pulse width t
p
limited by T
j,max
I
D,pulse
- - 12 A T
C
=25 °C
Avalanche energy, single pulse E
AS
- - 46 mJ I
D
=0.8 A,V
DD
=50 V
(see table 21)
Avalanche energy, repetitive E
AR
- - 0.13 I
D
=0.8 A,V
DD
=50 V
Avalanche current, repetitive I
AR
- - 0.8 A
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns V
DS
=0...480 V
Gate source voltage V
GS
-20 - 20 V static
-30 30 AC (f>1 Hz)
Power dissipation for
TO-220, TO-252, TO-263
P
tot
- - 37 W T
C
=25 °C
Power dissipation for
TO-220 FullPAK
P
tot
- - 26 W T
C
=25 °C
Operating and storage temperature T
j
,T
stg
-55 - 150 °C
Mounting torque
TO-220
- - 60 Ncm M3 and M3.5 screws
TO-220FP 50 M2.5 screws
Continuous diode forward current I
S
- - 3.9 A T
C
=25 °C
Diode pulse current
2)
I
S,pulse
- - 12 A T
C
=25 °C
Reverse diode dv/dt
3)
3) Identical low side and high side switch with identical R
G
dv/dt - - 15 V/ns V
DS
=0...480 V, I
SD
# I
D
,
T
j
=125 °C
Maximum diode commutation
speed
3)
di
f
/dt 500 A/µs (see table 22)
Rev. 2.4
Page 4
2018-03-05
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