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IPD50R3K0CE 英飞凌芯片 INFINEON 中文版规格书手册.pdf
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IPD50R3K0CE 英飞凌芯片 INFINEON 中文版规格书手册
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1
IPD50R3K0CE,IPU50R3K0CE
Rev.2.3,2016-06-13Final Data Sheet
tab
1
2
3
DPAK
1
2
tab
3
IPAK
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
@ T
j,max
550 V
R
DS(on),max
3 Ω
I
D
2.6 A
Q
g.typ
4.3 nC
I
D,pulse
4.1 A
E
oss
@400V 0.49 µJ
Type/OrderingCode Package Marking RelatedLinks
IPD50R3K0CE PG-TO 252
IPU50R3K0CE PG-TO 251
50S3K0CE see Appendix A
2
500VCoolMOSªCEPowerTransistor
IPD50R3K0CE,IPU50R3K0CE
Rev.2.3,2016-06-13Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
500VCoolMOSªCEPowerTransistor
IPD50R3K0CE,IPU50R3K0CE
Rev.2.3,2016-06-13Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
2.6
1.6
A
T
C
= 25°C
T
C
= 100°C
Pulsed drain current
2)
I
D,pulse
- - 4.1 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 18 mJ I
D
=0.5A; V
DD
= 50V
Avalanche energy, repetitive E
AR
- - 0.03 mJ I
D
=0.5A; V
DD
= 50V
Avalanche current, repetitive I
AR
- - 0.5 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns V
DS
=0...400V
Gate source voltage V
GS
-20
-30
-
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation (non FullPAK)
TO-252, TO-251
P
tot
- - 26 W T
C
=25°C
Operating and storage temperature T
j
,T
stg
-55 - 150 °C -
Continuous diode forward current I
S
- - 1.8 A T
C
=25°C
Diode pulse current
2)
I
S,pulse
- - 4.1 A T
C
= 25°C
Reverse diode dv/dt
3)
dv/dt - - 15 V/ns
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C,
t
cond
<2µs
Maximum diode commutation speed
3)
di
f
/dt - - 500 A/µs
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C,
t
cond
<2µs
2Thermalcharacteristics
Table3ThermalcharacteristicsDPAK,IPAK
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case R
thJC
- - 4.85 °C/W -
Thermal resistance, junction - ambient
4)
R
thJA
-
-
-
35
62
-
°C/W
SMD version, device on PCB,
minimal footprint
SMD version, device on PCB, 6cm
2
cooling area
4)
Soldering temperature, wave- &
reflowsoldering allowed
T
sold
- - 260 °C reflow MSL 1
1)
Limited by T
j max
. Maximum duty cycle D=0.5
2)
Pulse width t
p
limited by T
j,max
3)
V
DClink
=400V;V
DS,peak
<V
(BR)DSS
;identicallowsideandhighsideswitchwithidenticalR
G
4)
Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm
2
copper area (thickness 70µm) for drain connection. PCB
is vertical without air stream cooling.
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