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IPD200N15N3 G英飞凌芯片 INFINEON 中文版规格书手册.pdf
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IPD200N15N3 G英飞凌芯片 INFINEON 中文版规格书手册
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IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
OptiMOS
™
3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
50 A
T
C
=100 °C
40
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
200
Avalanche energy, single pulse
E
AS
I
D
=50 A, R
GS
=25 W
170 mJ
Reverse diode dv/dt dv /dt
I
D
=50 A, V
DS
=120 V,
di/dt =100 A/µs,
T
j,max
=175 °C
6 kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
150 W
Operating and storage temperature
T
j
, T
stg
-55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
1)
J-STD20 and JESD22
2)
See figure 3
V
DS
150
V
R
DS(on),max
20
mW
I
D
50
A
Product Summary
Type
IPB200N15N3 G
IPD200N15N3 G
IPI200N15N3 G
IPP200N15N3 G
Package
PG-TO263-3
PG-TO252-3
PG-TO262-3
PG-TO220-3
Marking
200N15N
200N15N
200N15N
200N15N
Rev. 2.07 page 1 2014-01-09
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 1 K/W
R
thJA
minimal footprint - - 75
6 cm2 cooling area
3)
- - 50
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
150 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=90 µA
2 3 4
Zero gate voltage drain current
I
DSS
V
DS
=120 V, V
GS
=0 V,
T
j
=25 °C
- 0.1 1 µA
V
DS
=120 V, V
GS
=0 V,
T
j
=125 °C
- 10 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 1 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=50 A
- 16 20
mW
V
GS
=8 V, I
D
=25 A
- 16 20
Gate resistance
R
G
- 2.4 -
W
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=50 A
29 57 - S
Values
Thermal resistance, junction -
ambient
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.07 page 2 2014-01-09
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 1820 - pF
Output capacitance
C
oss
- 214 -
Reverse transfer capacitance
C
rss
- 5 -
Turn-on delay time
t
d(on)
- 14 21 ns
Rise time
t
r
- 11 17
Turn-off delay time
t
d(off)
- 23 35
Fall time
t
f
- 6 9
Gate Charge Characteristics
4)
Gate to source charge
Q
gs
- 10 14 nC
Gate to drain charge
Q
gd
- 4 6
Switching charge
Q
sw
- 9 13
Gate charge total
Q
g
- 23 31
Gate plateau voltage
V
plateau
- 5.7 - V
Output charge
Q
oss
V
DD
=75 V, V
GS
=0 V
- 60 79 nC
Reverse Diode
Diode continous forward current
I
S
- - 50 A
Diode pulse current
I
S,pulse
- - 220
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=50 A,
T
j
=25 °C
- 1 1.2 V
Reverse recovery time
t
rr
- 106 - ns
Reverse recovery charge
Q
rr
- 332 - nC
4)
See figure 16 for gate charge parameter definition
V
R
=75 V, I
F
=I
S
,
di
F
/dt =100 A/µs
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=75 V,
f =1 MHz
V
DD
=75 V, V
GS
=10 V,
I
D
=50 A, R
G,ext
=1.6 W
V
DD
=75 V, I
D
=50 A,
V
GS
=0 to 10 V
Rev. 2.07 page 3 2014-01-09
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