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IPD530N15N3 G英飞凌芯片 INFINEON 中文版规格书手册.pdf
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IPD530N15N3 G英飞凌芯片 INFINEON 中文版规格书手册
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IPB530N15N3 G IPD530N15N3 G
IPI530N15N3 G IPP530N15N3 G
OptiMOS
TM
3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; Halogen Free
• Qualified according to JEDEC
1)
for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
21 A
T
C
=100 °C
15
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
84
Avalanche energy, single pulse
E
AS
I
D
=18 A, R
GS
=25 W
60 mJ
Gate source voltage
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
68 W
Operating and storage temperature
T
j
, T
stg
-55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
V
DS
150
V
R
DS(on),max
53
mW
I
D
21
A
Product Summary
Type
IPB530N15N3 G
IPD530N15N3 G
IPI530N15N3 G
IPP530N15N3 G
Package
PG-TO263-3
PG-TO252-3
PG-TO262-3
PG-TO220-3
Marking
530N15N
530N15N
530N15N
530N15N
Rev. 2.6 page 1 2013-07-09
IPB530N15N3 G IPD530N15N3 G
IPI530N15N3 G IPP530N15N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 2.2 K/W
R
thJA
minimal footprint - - 62
6 cm2 cooling area
3)
- - 40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
150 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=35 µA
2 3 4
Zero gate voltage drain current
I
DSS
V
DS
=120 V, V
GS
=0 V,
T
j
=25 °C
- 0.1 1 µA
V
DS
=120 V, V
GS
=0 V,
T
j
=125 °C
- 10 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 1 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=18 A
- 44 53
mW
V
GS
=8 V, I
D
=9 A
- 44 53
Gate resistance
R
G
- 2.1 -
W
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=18 A
11 21 - S
Values
2)
See figure 3
Thermal resistance, junction -
ambient
1)
J-STD20 and JESD22
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.6 page 2 2013-07-09
IPB530N15N3 G IPD530N15N3 G
IPI530N15N3 G IPP530N15N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 667 887 pF
Output capacitance
C
oss
- 80 106
Reverse transfer capacitance
C
rss
- 3.4 -
Turn-on delay time
t
d(on)
- 9 - ns
Rise time
t
r
- 9 -
Turn-off delay time
t
d(off)
- 13 -
Fall time
t
f
- 3 -
Gate Charge Characteristics
5)
Gate to source charge
Q
gs
- 3.8 - nC
Gate to drain charge
Q
gd
- 1.5 -
Switching charge
Q
sw
- 3.3 -
Gate charge total
Q
g
- 8.7 12
Gate plateau voltage
V
plateau
- 5.7 - V
Output charge
Q
oss
V
DD
=75 V, V
GS
=0 V
- 22 29 nC
Reverse Diode
Diode continous forward current
I
S
- - 21 A
Diode pulse current
I
S,pulse
- - 84
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=21 A,
T
j
=25 °C
- 1 1.2 V
Reverse recovery time
t
rr
- 80 - ns
Reverse recovery charge
Q
rr
- 229 - nC
5)
See figure 16 for gate charge parameter definition
V
R
=75 V, I
F
=18A,
di
F
/dt =100 A/µs
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=75 V,
f =1 MHz
V
DD
=75 V, V
GS
=10 V,
I
D
=18 A, R
G,ext
=1.6 W
V
DD
=75 V, I
D
=18 A,
V
GS
=0 to 10 V
Rev. 2.6 page 3 2013-07-09
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