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IRFB38N20D英飞凌芯片 INFINEON 中文版规格书手册.pdf
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IRFB38N20D英飞凌芯片 INFINEON 中文版规格书手册
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IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
V
DS
200 V
V
DS(Avalanche)
min.
260 V
R
DS(on)
max @ 10V 54
m
T
J
max
175 °C
Key Parameters
1 2016-5-31
Absolute Maximum Ratings
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 43*
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 30*
I
DM
Pulsed Drain Current 180
P
D
@T
A
= 25°C Maximum Power Dissipation 3.8 W
P
D
@T
C
= 25°C Maximum Power Dissipation 300* W
Linear Derating Factor 2.0* W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 9.5 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.47*
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) ––– 40
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
JA
Junction-to-Ambient ––– 62
D2 Pak
IRFS38N20DPbF
G D S
Gate Drain Source
Applications
High frequency DC-DC converters
Plasma Display Panel
S
D
G
S
D
G
D
TO-262 Pak
IRFSL38N20DPbF
HEXFET
®
Power MOSFET
S
D
G
D
TO-220AB
IRFB38N20DPbF
Base part number Package Type
Standard Pack
Form Quantity
IRFB38N20DPbF TO-220 Tube 50 IRFB38N20DPbF
IRFSL38N20DPbF TO-262 Tube 50 IRFSL38N20DPbF
IRFS38N20DPbF D2-Pak
Tube 50 IRFS38N20DPbF
Tape and Reel Left 800 IRFS38N20DTRLPbF
Orderable Part Number
Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective C
OSS
to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
Lead-Free
* R
JC
(end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium.
Notes through are on page 2.
IRFB/S/SL38N20DPbF
2 2016-5-31
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
starting T
J
= 25°C, L = 1.3mH, R
G
= 25, I
AS
= 26A.
I
SD
26A, di/dt 390A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 300µs; duty cycle 2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
This is only applied to TO-220AB package.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 200 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.22 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.054
V
GS
= 10V, I
D
= 26A
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V V
DS
= V
GS
, I
D
= 250µA
I
DSS
Drain-to-Source Leakage Current
––– ––– 25
µA
V
DS
=200 V, V
GS
= 0V
––– ––– 250 V
DS
= 160V,V
GS
= 0V,T
J
=150°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 30V
Gate-to-Source Reverse Leakage ––– -100 V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
gfs Forward Trans conductance 17 ––– ––– S V
DS
= 50V, I
D
= 26A
Q
g
Total Gate Charge ––– 60 91
I
D
= 26A
Q
gs
Gate-to-Source Charge ––– 17 25 V
DS
= 100V
Q
gd
Gate-to-Drain Charge ––– 28 42
V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 16 –––
ns
V
DD
= 100V
t
r
Rise Time ––– 95 ––– I
D
=26A
t
d(off)
Turn-Off Delay Time ––– 29 –––
R
G
= 2.5
t
f
Fall Time ––– 47 –––
V
GS
= 10V
C
iss
Input Capacitance ––– 2900 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 450 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 73 –––
ƒ = 1.0MHz
C
oss
Output Capacitance ––– 3550 ––– V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
C
oss
Output Capacitance ––– 180 ––– V
GS
= 0V, V
DS
= 160V ƒ = 1.0MHz
C
oss eff.
Effective Output Capacitance ––– 380 ––– V
GS
= 0V, V
DS
= 0V to 160V
nC
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 44
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 180
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.5 V T
J
= 25°C,I
S
= 26A,V
GS
= 0V
t
rr
Reverse Recovery Time ––– 160 240 ns
T
J
= 25°C ,I
F
= 26A
Q
rr
Reverse Recovery Charge ––– 1.3 2.0
C
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Avalanche Characteristics
Parameter Min. Typ. Max. Units
E
AS
Single Pulse Avalanche Energy
––– ––– 460 mJ
I
AR
Avalanche Current
––– ––– 26
A
E
AR
Repetitive Avalanche Energy
––– 390 ––– mJ
V
DS (Avalanche)
Repetitive Avalanche Voltage
260 ––– ––– V
IRFB/S/SL38N20DPbF
3 2016-5-31
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
300µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
300µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
5.0 7.0 9.0 11.0 13.0 15.0
V
GS
, Gate-to-Source Voltage (V)
1.00
10.00
100.00
1000.00
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 15V
300µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
44A
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