IRFB4510PBF INFINEON 英飞凌芯片 中文版规格书手册.pdf
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4/10/12
www.irf.com 1
HEXFET
®
Power MOSFET
S
D
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
TO-220AB
IRFB4510PbF
S
D
G
D
IRFB4510PbF
GDS
Gate Drain Source
PD - 97772
Absolute Maximum Ratings
Symbol
Parameter
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
f
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θ
JC
Junction-to-Case
i
–––
1.05
R
θ
CS
Case-to-Sink, Flat Greased Surface
0.50 ––– °C/W
R
θ
JA
Junction-to-Ambient, TO-220
i
––– 62
130
See Fig. 14, 15, 22a, 22b,
140
3.2
-55 to + 175
± 20
0.95
10lb
x
in (1.1N
x
m)
300
Max.
62
44
250
V
DSS
100V
R
DS(on)
typ.
10.7m
Ω
max.
13.5m
Ω
I
D (Silicon Limited)
62A
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