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IRFB4310ZPBF INFINEON 英飞凌芯片 中文版规格书手册.pdf
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IRFB4310ZPBF INFINEON 英飞凌芯片 中文版规格书手册
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4/23/12
www.irf.com 1
HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
IRFB4310ZPbF
IRFS4310ZPbF
IRFSL4310ZPbF
D
2
Pak
IRFS4310ZPbF
TO-220AB
IRFB4310ZPbF
TO-262
IRFSL4310ZPbF
S
D
G
S
D
G
S
D
G
D
D
D
GDS
Gate Drain Source
S
D
G
V
DSS
100V
R
DS(on)
typ.
4.8m
:
max.
6.0m
:
I
D
(Silicon Limited)
127A
c
I
D
(Package Limited)
120A
Absolute Maximum Ratings
Symbol
Parameter
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
g
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
k –––
0.6
R
CS
Case-to-Sink, Flat Greased Surface , TO-220
0.50 ––– °C/W
R
JA
Junction-to-Ambient, TO-220
k ––– 62
R
JA
Junction-to-Ambient (PCB Mount) , D
2
Pak
jk
––– 40
475
See Fig. 14, 15, 22a, 22b,
250
18
-55 to + 175
± 20
1.7
10lb
x
in (1.1N
x
m)
300
Max.
127
c
90
c
560
120
PD - 97115D
IRFB/S/SL4310ZPbF
2 www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.28mH
R
G
= 25, I
AS
= 58A, V
GS
=10V. Part not recommended for use
above the Eas value and test conditions.
I
SD
75A, di/dt 600A/μs, V
DD
V
(BR)DSS
, T
J
175°C.
S
D
G
Pulse width 400μs; duty cycle 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
is measured at T
J
approximately 90°C
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 4.8 6.0
m
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 0.7 –––
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 150 ––– ––– S
Q
g
Total Gate Charge ––– 120 170 nC
Q
gs
Gate-to-Source Charge ––– 29 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 35
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
––– 85 –––
t
d(on)
Turn-On Delay Time ––– 20 ––– ns
t
r
Rise Time ––– 60 –––
t
d(off)
Turn-Off Delay Time ––– 55 –––
t
f
Fall Time ––– 57 –––
C
iss
Input Capacitance ––– 6860 ––– pF
C
oss
Output Capacitance ––– 490 –––
C
rss
Reverse Transfer Capacitance ––– 220 –––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
––– 570 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)h
––– 920 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– –––
127c
A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 560 A
(Body Diode)d
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 40 ns
T
J
= 25°C V
R
= 85V,
––– 49
T
J
= 125°C I
F
= 75A
Q
rr
Reverse Recovery Charge ––– 58 nC
T
J
= 25°C
di/dt = 100A/μs
g
––– 89
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 2.5 ––– A
T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
D
= 75A
R
G
= 2.7
V
GS
= 10V g
V
DD
= 65V
I
D
= 75A, V
DS
=0V, V
GS
= 10V
T
J
= 25°C, I
S
= 75A, V
GS
= 0V g
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5mAd
V
GS
= 10V, I
D
= 75A g
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
V
DS
=50V
Conditions
V
GS
= 10V g
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 80V i, See Fig. 11
V
GS
= 0V, V
DS
= 0V to 80V h
Conditions
V
DS
= 50V, I
D
= 75A
I
D
= 75A
V
GS
= 20V
V
GS
= -20V
IRFB/S/SL4310ZPbF
www.irf.com 3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60μs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60μs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
)
V
DS
= 50V
60μs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 75A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 40 80 120 160 200
Q
G
Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 80V
VDS= 50V
VDS= 20V
I
D
= 75A
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