IRFB3307 INFINEON 英飞凌芯片 中文版规格书手册.pdf
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01/20/12
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
www.irf.com 1
D
2
Pak
IRFS3307PbF
TO-220AB
IRFB3307PbF
TO-262
IRFSL3307PbF
IRFB3307PbF
IRFS3307PbF
IRFSL3307PbF
HEXFET
®
Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
S
D
G
S
D
G
S
D
G
V
DSS
75V
R
DS(on)
typ.
5.0m
:
max.
6.3m
:
I
D
120A
PD - 95706D
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage V
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS ( Therm all y l i mi ted)
Single Pulse Avalanche Energy
e
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
g
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case
k
––– 0.61
l
R
CS
Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W
R
JA
Junction-to-Ambient, TO-220
k
––– 62
R
JA
Junction-to-Ambient (PCB Mount) , D
2
Pak
jk
––– 40
300
Max.
120
cl
84
cl
510
270
See Fig. 14, 15, 16a, 16b
200
l
-55 to + 175
± 20
1.3
l
10lb
x
in (1.1N
x
m)
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