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IPD50R380CE INFINEON 英飞凌芯片 中文版规格书手册.pdf
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IPD50R380CE INFINEON 英飞凌芯片 中文版规格书手册
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1
IPD50R380CE
Rev.2.3,2016-06-13Final Data Sheet
tab
1
2
3
DPAK
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
@ T
j,max
550 V
R
DS(on),max
0.38 Ω
I
D
14.1 A
Q
g,typ
24.8 nC
I
D,pulse
32.4 A
E
oss
@ 400V 2.54 µJ
Type/OrderingCode Package Marking RelatedLinks
IPD50R380CE PG-TO 252 50S380CE see Appendix A
2
500VCoolMOSªCEPowerTransistor
IPD50R380CE
Rev.2.3,2016-06-13Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
500VCoolMOSªCEPowerTransistor
IPD50R380CE
Rev.2.3,2016-06-13Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
14.1
8.9
A
T
C
= 25°C
T
C
= 100°C
Pulsed drain current
2)
I
D,pulse
- - 32.4 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 173 mJ I
D
=4A; V
DD
= 50V
Avalanche energy, repetitive E
AR
- - 0.26 mJ I
D
=4A; V
DD
= 50V
Avalanche current, repetitive I
AR
- - 4.0 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns V
DS
=0...400V
Gate source voltage V
GS
-20
-30
-
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation (non FullPAK)
TO-252
P
tot
- - 98 W T
C
=25°C
Operating and storage temperature T
j
,T
stg
-55 - 150 °C -
Continuous diode forward current I
S
- - 10 A T
C
=25°C
Diode pulse current
2)
I
S,pulse
- - 32.4 A T
C
= 25°C
Reverse diode dv/dt
3)
dv/dt - - 15 V/ns
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C,
t
cond
<2µs
Maximum diode commutation speed
3)
di
f
/dt - - 500 A/µs
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C,
t
cond
<2µs
2Thermalcharacteristics
Table3Thermalcharacteristics(nonFullPAK)TO-252
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case R
thJC
- - 1.27 °C/W -
Thermal resistance, junction - ambient R
thJA
- - 62 °C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
T
sold
- - 260 °C 1.6mm (0.063 in.) from case for 10s
1)
Limited by T
j max
<150°C, Maximum Duty Cycle D = 0.5
2)
Pulse width t
p
limited by T
j,max
3)
V
DClink
=400V;V
DS,peak
<V
(BR)DSS
;identicallowsideandhighsideswitchwithidenticalR
G
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