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IPD060N03L G INFINEON 英飞凌芯片 中文版规格书手册.pdf
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IPD060N03L G INFINEON 英飞凌芯片 中文版规格书手册
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Type
IPD060N03L G IPF060N03L G
IPS060N03L G IPU060N03L G
OptiMOS
™
3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel, logic level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• Avalanche rated
• Pb-free plating
• Halogen-free according to IEC61249-2-21 *
• Avalanche rated
• Pb-free plating; RoHS compliant
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
V
GS
=10 V, T
C
=25 °C
50 A
V
GS
=10 V, T
C
=100 °C
50
V
GS
=4.5 V, T
C
=25 °C
50
V
GS
=4.5 V,
T
C
=100 °C
43
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
350
Avalanche current, single pulse
3)
I
AS
T
C
=25 °C
50
Avalanche energy, single pulse
E
AS
I
D
=20 A, R
GS
=25 Ω
60 mJ
Reverse diode dv /dt dv /dt
I
D
=50 A, V
DS
=24 V,
di /dt =200 A/µs,
T
j,max
=175 °C
6 kV/µs
Gate source voltage
V
GS
±20 V
* IPD060N03L G HF available with SP000680632 only in Malacca, Malaysia
IPS060N03L G available in HF
Value
1)
J-STD20 and JESD22
V
DS
30 V
R
DS(on),max
6
mΩ
I
D
50 A
Product Summary
Type
IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G
Package
PG-TO252-3 PG-TO252-3-23 PG-TO251-3-11 PG-TO251-3
Marking
060N03L 060N03L 060N03L 060N03L
Rev. 2.1 page 1 2010-04-07
IPD060N03L G IPF060N03L G
IPS060N03L G IPU060N03L G
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation
P
tot
T
C
=25 °C
56 W
Operating and storage temperature
T
j
, T
stg
-55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 2.7 K/W
SMD version, device on PCB
R
thJA
minimal footprint - - 75
6 cm² cooling area
4)
--50
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
30 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250 µA
1 - 2.2
Zero gate voltage drain current
I
DSS
V
DS
=30 V, V
GS
=0 V,
T
j
=25 °C
- 0.1 1 µA
V
DS
=30 V, V
GS
=0 V,
T
j
=125 °C
- 10 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 10 100 nA
R
DS(on)
V
GS
=4.5 V, I
D
=30 A
- 7.2 9
mΩ
V
GS
=10 V, I
D
=30 A
-56
Gate resistance
R
G
- 1.4 -
Ω
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
34 67 - S
5)
Measured from drain tab to source pin
Value
Values
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Drain-source on-state resistance
5)
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Rev. 2.1 page 2 2010-04-07
IPD060N03L G IPF060N03L G
IPS060N03L G IPU060N03L G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 1700 2300 pF
Output capacitance
C
oss
- 640 850
Reverse transfer capacitance
C
rss
-3552
Turn-on delay time
t
d(on)
-5-ns
Rise time
t
r
-3-
Turn-off delay time
t
d(off)
-20-
Fall time
t
f
-3-
Gate Char
g
e Characteristics
6)
Gate to source charge
Q
gs
- 5.6 - nC
Gate charge at threshold
Q
g(th)
- 2.8 -
Gate to drain charge
Q
gd
- 2.5 -
Switching charge
Q
sw
- 5.3 -
Gate charge total
Q
g
- 10.8 14.4
Gate plateau voltage
V
plateau
- 3.2 - V
Gate charge total
Q
g
V
DD
=15 V, I
D
=30 A,
V
GS
=0 to 10 V
-2230
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
- 9.4 - nC
Output charge
Q
oss
V
DD
=15 V, V
GS
=0 V
-17-
Reverse Diode
Diode continuous forward current
I
S
- - 50 A
Diode pulse current
I
S,pulse
- - 350
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=30 A,
T
j
=25 °C
- 0.88 1.1 V
Reverse recovery charge
Q
rr
V
R
=15 V, I
F
=I
S
,
di
F
/dt =400 A/µs
- - 10 nC
6)
See figure 16 for gate charge parameter definition
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=15 V,
f =1 MHz
V
DD
=15 V, V
GS
=10 V,
I
D
=30 A, R
G
=1.6 Ω
V
DD
=15 V, I
D
=30 A,
V
GS
=0 to 4.5 V
Rev. 2.1 page 3 2010-04-07
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