IRFS4620 INFINEON 英飞凌芯片 中文版规格书手册.pdf
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12/18/08
www.irf.com 1
HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
IRFS4620PbF
IRFSL4620PbF
GDS
Gate Drain Source
PD -96203
S
D
G
D
D
S
G
D
2
Pak
IRFS4620PbF
TO-262
IRFSL4620PbF
V
DSS
200V
R
DS(on)
typ.
63.7m
:
max.
77.5m
:
I
D
24A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
E
AS (Thermally limited)
Sin
g
le Pulse Avalanche Ener
g
y
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Ener
g
y
c
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
Junction-to-Case
j
–––
1.045
R
θJA
Junction-to-Ambient (PCB Mount)
i
––– 40
A
°C
°C/W
300
113
See Fig. 14, 15, 22a, 22b,
144
54
Max.
24
17
100
-55 to + 175
± 20
0.96
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