IRFS4227 INFINEON 英飞凌芯片 中文版规格书手册.pdf
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www.irf.com 1
12/06/08
IRFS4227PbF
IRFSL4227PbF
Notes through are on page 8
PDP SWITCH
* R
θJC
(end of life) for D
2
Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
V
DS
max
200 V
V
DS (Avalanche)
typ.
240 V
R
DS(ON)
typ. @ 10V
22
m
:
I
RP
max @ T
C
= 100°C
130 A
T
J
max
175 °C
Key Parameters
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low E
PULSE
Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low Q
G
for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for
Robustness and Reliability
GDS
Gate Drain Source
S
D
G
D
2
Pak
IRFS4227PbF
TO-262
IRFSL4227PbF
S
D
G
S
D
G
D
D
Absolute Maximum Ratings
Parameter Units
V
GS
Gate-to-Source Voltage V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
I
RP
@ T
C
= 100°C
Repetitive Peak Current
g
P
D
@T
C
= 25°C
Power Dissipation
P
D
@T
C
= 100°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw N
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
f
––– 0.45*
R
θJA
Junction-to-Ambient (PCB Mounted) D
2
Pak
h
––– 40
A
W
°C
130
300
-40 to + 175
10lbf
x
in (1.1N
x
m)
330
190
2.2
Max.
44
260
62
±30
This HEXFET
®
Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to
achieve low on-resistance per silicon area and low E
PULSE
rating. Additional features of this MOSFET a r e
175°C operating junction temperature and high repetitive peak current capability. These features
combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications
Description
PD - 96131A
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