5/2/11
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HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
GDS
Gate Drain Source
IRFS3107PbF
IRFSL3107PbF
D
S
G
D
2
Pak
IRFS3107PbF
S
D
G
D
TO-262
IRFSL3107PbF
V
DSS
75V
R
DS
on
typ.
2.5m
:
max.
3.0m
:
I
D
(Silicon Limited)
230A
c
I
D
(Package Limited)
195A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Energy
g
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
kl –––
0.40
R
θ
JA
Junction-to-Ambient (PCB Mount)
jk ––– 40 °C/W
A
°C
300
300
See Fig. 14, 15, 22a, 22b,
370
14
Max.
230
c
160
900
195
-55 to + 175
± 20
2.5
10lb
x
in (1.1N
x
m)
PD -97144A