IPLU250N04S41R7XTMA1 INFINEON 英飞凌 电子元器件芯片.pdf
需积分: 5 36 浏览量
2023-05-27
12:31:58
上传
评论
收藏 284KB PDF 举报
IPLU250N04S4-1R7
OptiMOS™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant); 100% lead free
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25°C, V
GS
=10V
1)
250 A
T
C
=100°C, V
GS
=10V
2)
180
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
1000
Avalanche energy, single pulse
2)
E
AS
I
D
=125 A
170 mJ
Avalanche current, single pulse
I
AS
-
250 A
Gate source voltage
V
GS
- ±20 V
Power dissipation
P
tot
T
C
=25 °C
188 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
Value
V
DS
40 V
R
DS(on)
1.7
mW
I
D
250 A
Product Summary
Type Package Marking
IPLU250N04S4-1R7 H-PSOF-8-1 4N041R7
H-PSOF-8-1
8
1
1
8
Tab
Tab
Rev. 1.0
page 1 2014-12-08
资源评论
