IPB45P03P4L-11
IPI45P03P4L-11, IPP45P03P4L-11
OptiMOS
®
-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Intended for reverse battery protection
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25°C,
V
GS
=-10V
1)
-45 A
T
C
=100°C,
V
GS
=-10V
2)
-42
Pulsed drain current
2)
I
D,pulse
T
C
=25°C
-180
Avalanche energy, single pulse
E
AS
I
D
=-22.5A
110 mJ
Avalanche current, single pulse
I
AS
-
-45 A
Gate source voltage
V
GS
- +5/-16 V
Power dissipation
P
tot
T
C
=25 °C
58 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - 55/175/56
Value
V
DS
-30 V
R
DS(on)
(SMD Version) 10.8
mΩ
I
D
-45 A
Product Summary
Type Package Marking
IPB45P03P4L-11 PG-TO263-3-2 4P03L11
IPI45P03P4L-11 PG-TO262-3-1 4P03L11
IPP45P03P4L-11 PG-TO220-3-1 4P03L11
PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2
Rev. 1.0 page 1 2008-07-29