Vanguard-VS30200ATD.pdf
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30V/150A N-Channel Advanced Power MOSFET
Copyright© Vanguard Semiconductor Co., Ltd
Rev. A– Jun 16
th
, 2014 www.vgsemi.com
VS30200ATD
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Rating Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage ±20 V
(
BR
)
DSS
V
Drain-Source Breakdown Voltage 30 V
J
T
Maximum Junction Temperature 175 °C
STG
T
Storage Temperature Range -55 to 175 °C
D
I
Continuous Drain curren
C
T
=25°C
150 A
Mounted on Large Heat Sink
DM
I
Pulse Drain Current Tested (Sillicon Limit)
C
T
=25°C
600 A
Continuous Drain current
@
VGS=10V (See Fig2)
C
T
=25°C
150
D
I
Continuous Drain current@V
GS=10V
C
T
=100°C
100
A
D
P
Maximum Power Dissipation
C
T
=25°C
125 W
θ
JC
R
Thermal Resistance-Junction to Case 1.0
°C/W
θ
JA
R
Thermal Resistance Junction-Ambient 62 °C/W
Drain-Source Avalanche Ratings
EAS Avalanche Energy, Single Pulsed 600 mJ
Features
♦ Extremely Low On-Resistance
♦ Fast Switching
♦ 100% Avalanche Tested
♦ Repetitive Avalanche Allowed up to Tjmax
♦ Lead-Free, RoHS Compliant
Description
VS30200ATD designed by the trench processing
techniques to achieve extremely low on-resistance.
Additional features of this design are a 175°C
junction operating temperature, fast switching
speed and improved repetitive avalanche rating .
These features combine to make this design an
extremely efficient and reliable device for use in
BLDC Motor、Brushed Motor drive applications
and a wide variety of other applications.
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