Vanguard-VS2598AP.pdf
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20V/90A N-Channel Advanced Power MOSFET
Copyright Vanguard Semiconductor Co., Ltd
Rev B1– May.05
th
, 2015 www.vgsemi.com
VS2598AP
V DS 20 V
R DS(on),TYP@ VGS=4.5 V 5.5 m
I D 90 A
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol Parameter Rating Unit
(BR)DSS
V
Drain-Source breakdown voltage 20 V
S
I
Diode continuous forward current
C
T
=25°C
90 A
C
T
=25°C
90 A
D
I
Continuous drain current@V
GS=10V
A
T
=70°C
72 A
DM
I
Pulse drain current tested ①
C
T
=25°C
270 A
D
P
Maximum power dissipation
A
T
=25°C
31 W
VGS Gate-Source voltage ±12 V
STG
T
J
T
Storage and operating temperature range -55 to 175 °C
Thermal Characteristics
Symbol Parameter Typical Unit
JC
R
Thermal Resistance-Junction to Case 1.98 °C/W
JA
R
Thermal Resistance Junction-Ambient 62.5 °C/W
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed ②
225 mJ
Features
N-Channel
Enhancement mode
Very low on-resistance R
DS(on) @ VGS=4.5 V
Fast Switching
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
Part ID Package Type Marking Tape and reel information
VS2598AP PDFN5x6 2598AP 3000Pcs/Reel
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