Vanguard-VS3038AD.pdf
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30V/30A N-Channel Advanced Power MOSFET
Copyright© Vanguard Semiconductor Co., Ltd Rev.
A– Jun.28
th
, 2013
VS3038AD
VS3038AI
Page 1 ,Total 5
www.vgsemi.com
Absolute Maximum Ratings
Symbol Parameter Rating Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
GS
V
Gate-Source Voltage ±20 V
(BR)DSS
V
Drain-Source Breakdown Voltage
30 V
J
T
Maximum Junction Temperature 150 °C
STG
T
Storage Temperature Range -50 to 150 °C
S
I
Diode Continuous Forward Current
C
T
=25°C
30
①
A
Mounted on Large Heat Sink
DM
I
Pulse Drain Current Tested
C
T
=25°C
120
②
A
C
T
=25°C
30
①
D
I
Continuous Drain Current(VGS=10V)
C
T
=100°C
20
A
C
T
=25°C
40 W
D
P
Maximum Power Dissipation
C
T
=100°C
24 W
JC
R
θ
Thermal Resistance-Junction to Case 2.75 °C/W
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed ③
64 mJ
Features
♦ 30V/30A
♦ Ron(typ.)=14.5
mΩ @VGS=10V
♦ Ron(typ.)=24.5
mΩ @VGS=4.5V
♦ Low On-Resistance
♦ Fast Switching
♦
100% avalanche tested
♦ Lead-Free, RoHS Compliant
Description
VS3038AI/D designed by the trench processing techniques to
achieve extremely low on-resistance. And fast switching speed
and improved transfer effective . These features combine to
make this design an extremely efficient and reliable device for
variety of DC-DC applications.
VS3038AD VS3038AI
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