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This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.00 /May. 2001 Hynix Semiconductor

HY62LF16806B Series

512Kx16bit full CMOS SRAM

Document Title

512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM

Revision History

Revision No History Draft Date Remark

00 Initial Draft May.29.2001 Preliminary

HY62LF16806B Series

Rev.00/May. 2001

Preliminary

DESCRIPTION

The HY62LF16806B is a high speed, super low

power and 8Mbit full CMOS SRAM organized as

524,288 words by 16bits. The HY62LF16806B

uses high performance full CMOS process

technology and is designed for high speed and

low power circuit technology. It is particularly well-

suited for the high density low power system

application. This device has a data retention

mode that guarantees data to remain valid at a

minimum power supply voltage of 1.2V.

FEATURES

• Fully static operation and Tri-state output

• TTL compatible inputs and outputs

• Battery backup(LL/SL-part)

- 1.2V(min) data retention

• Standard pin configuration

- 48-FBGA

Product Voltage

Speed Operation Standby Current(uA)

Temperature

No. (V) (ns) Current/Icc(mA)

LL SL

(°C)

HY62LF16806B-C 2.3~2.7

70/85/100

3 20 8 0~70

HY62LF16806B- I 2.3~2.7

70/85/100

3 20 8 -45~85

Note 1. C : Commercial, I : Industrial

2. Current value is max.

PIN CONNECTION ( Top View ) BLOCK DIAGRAM

PIN DESCRIPTION

Pin Name

Pin Function Pin Name Pin Function

/CS1, CS2

Chip Select I/O1~I/O16 Data Inputs / Outputs

/WE Write Enable A0~A18 Address Inputs

/OE Output Enable Vcc Power(2.3V~2.7V)

/LB Lower Byte Control(I/O1~I/O8) Vss Ground

/UB Upper Byte Control(I/O9~I/O16)

NC No Connection

/LB

IO9

IO10

/OE

CS2

/UB

/CS1

IO1

IO11

IO2

IO3

Vss

IO12

A17

IO4

Vcc

IO13

Vss

A16

IO5

Vss

IO15

IO14

A14

A15

IO6

IO7

IO16

A12

A13

/WE

IO8

A18

A9 A10

A11

MEMORY ARRAY

512K x 16

ROW

DECODER

SENSE AMP

WRITE DRIVER

DATA I/O

BUFFER

I/O1

I/O8

I/O9

I/O16

COLUMN

DECODER

BLOCK

DECODER

PRE DECODER

ADD INPUT

UFFER

A18

/CS1

/OE

/LB

/UB

/WE

CS2

HY62LF16806B Series

Rev.00/May. 2001

ORDERING INFORMATION

Part No. Speed Power Package

Temp.

HY62LF16806B-DFC 70/85/100 LL-part FBGA C

HY62LF16806B-SFC 70/85/100 SL-part FBGA C

HY62LF16806B-DFI 70/85/100 LL-part FBGA I

HY62LF16806B-SFI 70/85/100 SL-part FBGA I

Note 1. C : Commercial, I : Industrial

ABSOLUTE MAXIMUM RATINGS (1)

Symbol Parameter Rating Unit Remark

VIN, VOUT Input/Output Voltage -0.3 to Vcc+0.3 V

Vcc Power Supply -0.3 to 3.6 V

0 to 70

°C

HY62LF16806B-C

TA Operating Temperature

-40 to 85

°C

HY62LF16806B-I

TSTG Storage Temperature -55 to 150

°C

PD Power Dissipation 1.0 W

TSOLDER Ball Soldering Temperature & Time

260 • 10 °C • sec

Note

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is stress rating only and the functional operation of the device under these or

any other conditions above those indicated in the operation of this specification is not implied.

Exposure to the absolute maximum rating conditions for extended period may affect reliability.

TRUTH TABLE

I/O Pin

/CS1

CS2

/WE

/OE

/LB

/UB

Mode

I/O1~I/O8 I/O9~I/O16

Power

H X X X X X Hi-Z Hi-Z

X L X X X X Hi-Z Hi-Z

X X X X H H

Deselected

Hi-Z Hi-Z

Standby

L H H H L X Hi-Z Hi-Z

L H H H X L

Output Disabled

Hi-Z Hi-Z

Active

L H DOUT Hi-Z

H L Hi-Z DOUT

L H H L

L L

Read

DOUT DOUT

Active

L H DIN Hi-Z

H L Hi-Z DIN

L H L X

L L

Write

DIN DIN

Active

Note:

1. H=VIH, L=VIL, X=don't care(VIH or VIL)

2. UB, LB(Upper, Lower Byte enable)

These active LOW inputs allow individual bytes to be written or read.

When LB is LOW, data is written or read to the lower byte, I/O1 -I/O8.

When UB is LOW, data is written or read to the upper byte, I/O9 -I/O16.

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