HYNIX-HY62SF16806A.pdf

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.03 /Jan. 2002 Hynix Semiconductor

- tBHZ : 30ns --> 20ns

- tOE : 40ns à 35ns@70ns

HY62SF16806A

Rev.03 /Jan. 2002

2

DESCRIPTION

suited for the high density low power system

application. This device has a data retention mode

that guarantees data to remain valid at a minimum

power supply voltage of 1.2V.

Speed Operation Standby Current(uA)

Temperature

No. (V) (ns) Current/Icc(mA)

Pin Function Pin Name Pin Function

/CS1, CS2 Chip Select I/O1~I/O16 Data Inputs / Outputs

/WE Write Enable A0~A18 Address Inputs

/LB Lower Byte Control(I/O1~I/O8) Vss Ground

/UB Upper Byte Control(I/O9~I/O16) NC No Connection

HY62SF16806A

Rev.03 /Jan. 2002

2

Note

H X X X X X Hi-Z Hi-Z

X X X X H H

L H H H L X Hi-Z Hi-Z

Output Disabled

L H DOUT Hi-Z

L H H L

L L

H L Hi-Z DIN