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Hynix -HY62UF16404D.pdf
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Hynix -HY62UF16404D.pdf
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This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev.04 / Oct.01 Hynix Semiconductor
HY62UF16404D Series
256Kx16bit full CMOS SRAM
Document Title
256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM
Revision History
Revision No History Draft Date Remark
00 Initial Draft Dec.20.2000 Preliminary
01 Changed Logo Mar.23.2001 Preliminary
02 Changed Isb1 values Jun.07.2001 Preliminary
03 Changed Package Size (6.1mm -> 6.0mm) Aug.07.2001 Preliminary
04 Changed tCHZ,tOHZ,tBHZ 30ns -> 20ns Oct.22.2001 Final
HY62UF16404D Series
Rev.04 / Oct.01
2
Preliminary
DESCRIPTION
The HY62UF16404D is a high speed, super low
power and 4Mbit full CMOS SRAM organized as
256K words by 16bits. The HY62UF16404D uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.5V.
FEATURES
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Battery backup
-. 1.5V(min) data retention
• Standard pin configuration
-. 48-ball FBGA
Standby
Current(uA) Product No.
Voltage
(V)
Speed (ns)
Operation
Current/Icc(mA)
LL SL
Temperature
(°C)
HY62UF16404D-I
2.7~3.3
55/70 4 12 6 -40~85
Note 1. I : Industrial
2. Current value is max.
PIN CONNECTION BLOCK DIAGRAM
PIN DESCRIPTION
Pin Name
Pin Function Pin Name Pin Function
/CS Chip Select I/O1~I/O16 Data Inputs/Outputs
/WE Write Enable A0~A17 Address Inputs
/OE Output Enable Vcc Power (2.7~3.3V)
/LB Lower Byte Control (I/O1~I/O8) Vss Ground
/UB Upper Byte Control (I/O9~I/O16)
NC No Connection
MEMORY ARRAY
256K x 16
ROW
DECODER
SENSE AMP
WRITE DRIVER
DATA I/O
BUFFER
I/O1
I/O8
I/O9
I/O16
COLUMN
DECODER
BLOCK
DECODER
PRE DECODER
ADD INPUT
BUFFER
A0
A17
/CS
/OE
/LB
/UB
/WE
1
2
3
4
5
6
A
B
C
D
E
F
G
H
FBGA
/LB
IO9
IO10
/OE
A0
A1
A2
NC
/UB
A3
A4
/CS
IO1
IO11
A5
A6
IO2
IO3
Vss
IO12
A17
A7
IO4
Vcc
Vcc
IO13
NC
A16
IO5
Vss
IO15
IO14
A14
A15
IO6
IO7
IO16
NC
A12
A13
/WE
IO8
NC
A8
A9 A10
A11
NC
HY62UF16404D Series
Rev.04 / Oct.01
2
ORDERING INFORMATION
Part No. Speed Power Temp
.
Package
HY62UF16404D-DF(I) 55/70 LL-part I FBGA
HY62UF16404D-SF(I) 55/70 SL-part I FBGA
Note 1. I : Industrial
ABSOLUTE MAXIMUM RATINGS (1)
Symbol Parameter Rating Unit Remark
VIN, VOUT Input/Output Voltage -0.3 to 3.6 V
Vcc Power Supply -0.3 to 4.6 V
TA Operating Temperature -40 to 85
°C
HY62UF16404D-I
TSTG Storage Temperature -55 to 150
°C
PD Power Dissipation 1.0 W
TSOLDER Ball Soldering Temperature & Time
260 • 10 °C•sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
I/O Pin
/CS
/WE
/OE
/LB
/UB
Mode
I/O1~I/O8 I/O9~I/O16
Power
H X X X X
X X X H H
Deselected High-Z High-Z Standby
L X
L H H
X L
Output Disabled
High-Z High-Z Active
L H DOUT High-Z
H L High-Z DOUT
L H L
L L
Read
DOUT DOUT
Active
L H DIN High-Z
H L High-Z DIN
L L X
L L
Write
DIN DIN
Active
Note:
1. H=VIH, L=VIL, X=don't care (VIL or VIH)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When /UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
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