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TI-TMP63.pdf
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TI-TMP63.pdf
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ADVANCEINFORMATION
Temperature (qC)
Resistance (k:)
-40 -20 0 20 40 60 80 100 120 140
60
80
100
120
140
160
180
200
TMP6
R
Bias
V
Bias
V
Temp
R
TMP63
V
Temp
R
TMP63
I
Bias
Product
Folder
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本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。 有关适用的官方英文版本的最新信息,请访问 www.ti.com,其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SNIS211
TMP63
ZHCSKB0 –OCTOBER 2019
采采用用小小型型 0402 封封装装的的 TMP63 100kΩ 线线性性热热敏敏电电阻阻
1
1 特特性性
1
• 具有
正温度系数 (PTC) 的硅基热敏电阻
• 与非线性热敏电阻相比,线性热敏电阻随温度变化
– 可简化电阻/温度转换方法
– 可降低查找表内存要求
– 无需线性化电路或多点校准
– 可降低在宽温度范围内的精度
• 在 25°C 下具有 100kΩ 标称电阻 (R25)
• 在整个温度范围内具有稳定的灵敏度
– 6400ppm/°C TCR (25°C)
– 在整个温度范围内具有 0.2% 的典型 TCR 容差
(-40°C 至 125°C)
• 宽工作温度范围:
– –40°C 至 125°C
• 快速热响应时间:
– 对于 DEC 封装为 0.6秒
• 长寿命和稳健性能
– 与由于自加热而尽可能降低误差的传统 NTC 相
比,具有超低功耗
– 内置失效防护,能够在发生短路故障时提供保护
– 在高温和高湿度环境下测试后可实现 <1% 的最
大漂移
• 提供的封装选项:
– X1SON(DEC/0402 封装尺寸)
2 应应用用
• 温度测量与监测
• 热补偿
• 热保护(带有比较器)
3 说说明明
TMP63 小型硅线性热敏电阻用于温度测量、保护、补
偿和控制系统。与传统 NTC 热敏电阻相比,TMP63
器件可在整个温度范围内提供增强的线性和一致的灵敏
度。
TMP63 器件具有稳健的性能,这得益于它对环境变化
的抗扰能力和内置的高温下失效防护行为。此器件目前
可采用兼容 0402 尺寸的 2 引脚表面贴装 X1SON 封
装、。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
TMP63 X1SON (2) 0.60mm x 1.00mm
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
空白
空白
空白
空白
空白
空白
典典型型实实施施电电路路 典典型型电电阻阻与与环环境境温温度度间间的的关关系系
ADVANCEINFORMATION
2
TMP63
ZHCSKB0 –OCTOBER 2019
www.ti.com.cn
Copyright © 2019, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
7 Detailed Description.............................................. 6
7.1 Overview ................................................................... 6
7.2 Functional Block Diagram ......................................... 6
7.3 Feature Description................................................... 6
7.4 Device Functional Modes.......................................... 8
8 Application and Implementation .......................... 9
8.1 Application Information.............................................. 9
8.2 Typical Application .................................................... 9
9 Power Supply Recommendations...................... 14
10 Layout................................................................... 14
10.1 Layout Guidelines ................................................. 14
10.2 Layout Example .................................................... 14
11 器器件件和和文文档档支支持持 ..................................................... 15
11.1 接收文档更新通知 ................................................. 15
11.2 支持资源................................................................ 15
11.3 商标 ....................................................................... 15
11.4 静电放电警告......................................................... 15
11.5 Glossary................................................................ 15
12 机机械械、、封封装装和和可可订订购购信信息息....................................... 15
4 修修订订历历史史记记录录
注:之前版本的页码可能与当前版本有所不同。
日日期期 版版本本 注注释释
2019 年 10 月 * 最初发布版本。
ADVANCEINFORMATION
1
2
3
TMP63
www.ti.com.cn
ZHCSKB0 –OCTOBER 2019
Copyright © 2019, Texas Instruments Incorporated
5 Pin Configuration and Functions
DEC Package
2-Pin X1SON
Top View (Angled)
Pin Functions
PIN
TYPE DESCRIPTION
NAME
X1SON
(DEC)
– 1
—
Thermistor (–) and (+) terminals. For proper operation, ensure a positive bias where the +
terminal is at a higher voltage potential than the – terminal.
+ 2
ADVANCEINFORMATION
4
TMP63
ZHCSKB0 –OCTOBER 2019
www.ti.com.cn
Copyright © 2019, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Theseare stress ratings
only, which do not imply functional operation of the device at these or anyother conditions beyond those indicated under Recommended
OperatingConditions. Exposure to absolute-maximum-rated conditions for extended periods mayaffect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Voltage across the device +6 V
Junction temperature (T
J
) –40 +150 °C
Current through the device +450 µA
Storage temperature (T
stg
) –65 +150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM) per JESD22-A114
(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±750
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V
Sns
Voltage Across Pins 2 (+) and 1 (–) 0 5.5 V
I
Sns
Current passing through the device 0 400 µA
T
A
Operating free-air temperature (specified performance) (X1SON/DEC Package) –40 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(2) The junction to ambient thermal resistance (Rθ
JA
) under natural convection is obtained in a simulation on a JEDEC-standard, High-K
board as specified in JESD51-7, in an environment described in JESD51-2. Exposed pad packages assume that thermal vias are
included in the PCB, per JESD 51-5.
(3) Changes in output due to self heating can be computed by multiplying the internal dissipation by the thermal resistance.
6.4 Thermal Information
THERMAL METRIC
(1)
TMP63
UnitsDEC (X1SON)
2 PINS
R
θJA
Junction-to-ambient thermal resistance
(2)(3)
443.4 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 195.7 °C/W
R
θJB
Junction-to-board thermal resistance 254.6 °C/W
Ψ
JT
Junction-to-top characterization parameter 19.9 °C/W
Ψ
JB
Junction-to-board characterization parameter 254.5 °C/W
ADVANCEINFORMATION
5
TMP63
www.ti.com.cn
ZHCSKB0 –OCTOBER 2019
版权 © 2019, Texas Instruments Incorporated
6.5 Electrical Characteristics
T
A
= -40°C - 125°C, I
Sns
= 20 μA (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
R
25
Thermistor Resistance at 25°C T
A
= 25°C 100 kΩ
R
TOL
Resistance Tolerance
T
A
= 25°C –1 +1
%T
A
= 0°C - 70°C –1 +1
T
A
= -40°C - 125°C –1.5 +1.5
TCR
-35
Temperature Coefficient of Resistance
T1 = -40°C, T2 = -30°C +6220
ppm/°CTCR
25
T1 = 20°C, T2 = 30°C +6400
TCR
85
T1 = 80°C, T2 = 90°C +5910
TCR
-35
%
Temperature Coefficient of Resistance Tolerance
T1 = -40°C, T2 = -30°C ±0.4
%TCR
25
% T1 = 20°C, T2 = 30°C ±0.2
TCR
85
% T1 = 80°C, T2 = 90°C ±0.3
ΔR Sensor Long Term Drift (Reliability)
96 hours continuous operation,RH=85%, T
A
=
130°C, V
Bias
= 5.5V
0.1 +0.8
%
600 hours continuous operation, T
A
= 150°C, V
Bias
= 5.5V
0.1 +1
t
RES (stirred
liquid)
Thermal response to 63% T1=25°C in Still Air to T2=125°C in Stirred Liquid 0.6 s
t
RES (still air)
Thermal response to 63% T1=25°C to T2=70°C in Still Air 3.2 s
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