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BSP78 英飞凌芯片 INFINEON 中文版规格书手册.pdf
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BSP78 英飞凌芯片 INFINEON 中文版规格书手册
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Product Summary
Drain source voltage
V
DS
42 V
On-state resistance R
DS
(
on
)
50 mW
Nominal load current I
D
(
Nom
)
3 A
Clamping energy E
A
S
500 mJ
VPS05163
1
2
3
4
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
Ò
technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET
â
Pin 1
Pin 2 and 4 (TAB)
Pin 3
Complete product spectrum and additional information http://www.infineon.com/hitfet
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with auto restart
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Datasheet 1 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 78
Maximum Ratings at T
j
= 25°C, unless otherwise specified
Parameter
Symbol Value Unit
Drain source voltage V
DS
42 V
Supply voltage for full short circuit protection V
bb
(
SC
)
42
Continuous input voltage
1)
V
IN
-0.2
2)
... +10
Continuous input current
2)
-0.2V £ V
IN
£ 10V
V
IN
< -0.2V or V
IN
> 10V
I
IN
self limited
| I
IN
| £ 2
mA
Operating temperature T
j
-40 ...+150
°C
Storage temperature T
st
g
-55 ... +150
Power dissipation
5)
T
C
= 85 °C
P
tot
3.8 W
Unclamped single pulse inductive energy
2)
E
A
S
500
mJ
Load dump protection V
LoadDump
2)3)
= V
A
+ V
S
V
IN
= 0 and 10 V, t
d
= 400 ms, R
I
= 2 W,
R
L
= 4.5 W, V
A
= 13.5 V
V
LD
53.5 V
V
ESD
2 kV
Thermal resistance
junction - ambient:
@ min. footprint
@ 6 cm
2
cooling area
4)
R
thJA
125
72
K/W
junction-soldering point: R
thJS
17 K/W
1
For input voltages beyond these limits I
IN
has to be limited.
2
not subject to production test, specified by design
3
V
Loaddump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
5
not subject to production test, calculated by R
thJA
and R
ds(on)
Electrostatic discharge voltage
2)
(Human Body Model)
according to Jedec norm
EIA/JESD22-A114-B, Section 4
Datasheet 2 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 78
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150, I
D
= 10 mA
V
DS(AZ)
42 - 55 V
Off-state drain current
T
j
= -40...+85 °C, V
DS
= 32 V , V
IN
= 0 V
T
j
= 150 °C
I
DSS
-
-
1.5
5
8
15
µA
Input threshold voltage
I
D
= 1.4 mA, T
j
= 25 °C
I
D
= 1.4 mA, T
j
= 150 °C
V
IN(th)
1.3
0.8
1.7
-
2.2
-
V
On state input current I
IN
(
on
)
- 10 30 µA
On-state resistance
V
IN
= 5 V, I
D
= 3 A, T
j
= 25 °C
V
IN
= 5 V, I
D
= 3 A, T
j
= 150 °C
R
DS(on)
-
-
45
75
60
100
mW
On-state resistance
V
IN
= 10 V, I
D
= 3 A, T
j
= 25 °C
V
IN
= 10 V, I
D
= 3 A, T
j
= 150 °C
R
DS(on)
-
-
35
65
50
90
Nominal load current
5)
V
DS
= 0.5 V, T
j
< 150°C, V
IN
= 10 V, T
A
= 85 °C
I
D(Nom)
3 4 - A
Current limit (active if V
DS
>2.5 V)
1)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 200 µs
I
D(lim)
18 24 30
1
Device switched on into existing short circuit (see diagram Determination of I
D(lim)
). If the device is in on condi
t
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5
not subject to production test, calculated by R
thJA
and R
ds(on)
Datasheet 3 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 78
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