BSP125 INFINEON 英飞凌芯片 中文版规格书手册.pdf
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2012-11-27
Page 1
Rev. 2.2
BSP125
SIPMOS
Power-Transistor
Product Summary
V
DS
600 V
R
DS(on)
45 Ω
I
D
0.12 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
PG-SOT223
Marking
BSP125
Type Package
Tape and Reel Information
BSP125
PG-SOT223
H6433: 4000 pcs/reel
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
0.12
0.1
A
Pulsed drain current
T
A
=25°C
I
D puls
0.48
Reverse diode dv/dt
I
S
=0.12A, V
DS
=480V, di/dt=200A/µs, T
jmax
=175°C
dv/dt
6 kV/µs
Gate source voltage V
GS
±20
V
ESD Class (JESD22-A114-HBM) 1A (>250V, <500V)
Power dissipation
T
A
=25°C, T
A
=25
P
tot
1.8 W
Operating and storage temperature T
j
,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1 55/150/56
Pb-free lead plating; RoHS compliant
•
BSP125
PG-SOT223
H6327: 1000 pcs/reel
RoHS compliant
Yes
Yes
BSP125
Packaging
Non dry
x Qualified according to AEC Q101
Non dry
•
HalogenfreeaccordingtoIEC61249221
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