IAUT300N08S5N011 英飞凌芯片 INFINEON 中文版规格书手册.pdf
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IAUT300N08S5N011
OptiMOS™-5 Power-Transistor
Features
• OptiMOS™ power MOSFET for automotive applications
• N-channel – Enhancement mode – Normal Level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
• Robust design
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T c=25 °C, V
GS
=10 V,
Chip limitation
1,2)
410 A
V
GS
=10V, DC
current
3)
300
T
a
= 85°C, V
GS
=10 V,
R
thJA
on 2s2p
2,4)
52
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C, t
p
= 100 µs
1505
Avalanche energy, single pulse
2)
E
AS
I
D
=150 A
817 mJ
Avalanche current, single pulse
I
AS
-
300 A
Gate source voltage
V
GS
- ±20 V
Power dissipation
P
tot
T
C
=25 °C
375 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
80 V
R
DS(on)
1.1
mW
I
D
300 A
Product Summary
Type Package Marking
IAUT300N08S5N011
PG-HSOF-8-1 5N08011
PG-HSOF-8-1
8
1
1
8
Tab
Tab
Rev. 1.1
page 1 2021-01-26
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