IPI90R340C3
CoolMOS
™
Power Transistor
Features
• Lowest figure-of-merit R
ON
x Q
g
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Worldwide best R
DS,on
in TO262 (I
2
Pak)
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Maximum ratings, at T
J
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
A
T
C
=100 °C
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=3.1 A, V
DD
=50 V
678 mJ
Avalanche energy, repetitive t
AR
2),3)
E
AR
I
D
=3.1 A, V
DD
=50 V
Avalanche current, repetitive t
AR
2),3)
I
AR
A
MOSFET dv /dt ruggedness dv /dt
V
DS
=0...400 V
V/ns
Gate source voltage
V
GS
static V
AC (f>1 Hz)
Power dissipation
P
tot
T
C
=25 °C
W
Operating and storage temperature
T
J
, T
stg
°C
Value
15
9.5
34
±30
208
-55 ... 150
1
3.1
50
±20
V
DS
@ T
J
=25°C 900 V
R
DS(on),max
@T
J
=25°C 0.34
Ω
Q
g,typ
94 nC
Product Summary
Type Package Marking
IPI90R340C3 PG-TO262 9R340C
PG-TO262
Rev. 1.
1 page 1 2012-01-10
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