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IPI041N12N3 G英飞凌芯片 INFINEON 中文版规格书手册.pdf
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IPI041N12N3 G英飞凌芯片 INFINEON 中文版规格书手册
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IPI041N12N3 G
IPP041N12N3 G IPB038N12N3 G
OptiMOS
TM
3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC
1)
for target application
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
2)
120 A
T
C
=100 °C
120
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
480
Avalanche energy, single pulse
E
AS
I
D
=100 A, R
GS
=25 W
900 mJ
Gate source voltage
4)
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
300 W
Operating and storage temperature
T
j
, T
stg
-55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
V
DS
120
V
R
DS(on),max (TO-263)
3.8
mW
I
D
120
A
Product Summary
Type
IPB038N12N3 G
IPI041N12N3 G
IPP041N12N3 G
Package
PG-TO263-3
PG-TO262-3
PG-TO220-3
Marking
038N12N
041N12N
041N12N
Rev. 2.3 page 1 2014-04-15
IPI041N12N3 G
IPP041N12N3 G IPB038N12N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 0.5 K/W
Thermal resistance,
R
thJA
minimal footprint - - 62
junction - ambient
6 cm
2
cooling area
5)
- - 40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
120 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=270 µA
2 3 4
Zero gate voltage drain current
I
DSS
V
DS
=100 V, V
GS
=0 V,
T
j
=25 °C
- 0.1 1 µA
V
DS
=100 V, V
GS
=0 V,
T
j
=125 °C
- 10 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 1 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=100 A
- 3.5 4.1
mW
V
GS
=10 V, I
D
=100 A,
TO263
- 3.2 3.8
Gate resistance
R
G
- 1.4 -
W
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=100 A
83 165 - S
1)
J-STD20 and JESD22
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
4)
T
jmax
=150 °C and duty cycle D=0.01 for V
gs
<-5V
2)
Current is limited by bondwire; with an R
thJC
=0.5 K/W the chip is able to carry 182 A.
3)
See figure 3
Rev. 2.3 page 2 2014-04-15
IPI041N12N3 G
IPP041N12N3 G IPB038N12N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 10400 13800 pF
Output capacitance
C
oss
- 1320 1760
Reverse transfer capacitance
C
rss
- 61 -
Turn-on delay time
t
d(on)
- 35 - ns
Rise time
t
r
- 52.0 -
Turn-off delay time
t
d(off)
- 70 -
Fall time
t
f
- 21 -
Gate Charge Characteristics
6)
Gate to source charge
Q
gs
- 52 - nC
Gate to drain charge
Q
gd
- 37 -
Switching charge
Q
sw
- 58 -
Gate charge total
Q
g
- 158 211
Gate plateau voltage
V
plateau
- 5.0 - V
Output charge
Q
oss
V
DD
=60.1 V, V
GS
=0 V
- 182 243 nC
Reverse Diode
Diode continous forward current
I
S
- - 120 A
Diode pulse current
I
S,pulse
- - 480
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=100 A,
T
j
=25 °C
- 0.9 1.2 V
Reverse recovery time
t
rr
- 123 ns
Reverse recovery charge
Q
rr
- 356 - nC
6)
See figure 16 for gate charge parameter definition
V
R
=60 V, I
F
=I
S
,
di
F
/dt =100 A/µs
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=60 V,
f =1 MHz
V
DD
=60 V, V
GS
=10 V,
I
D
=100 A,
R
G,ext
=1.6 W
V
DD
=60.1 V,
I
D
=100 A,
V
GS
=0 to 10 V
Rev. 2.3 page 3 2014-04-15
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