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1
IPI045N10N3G
Rev.2.10,2019-01-10Final Data Sheet
I²-PAK
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
OptiMOS
ª
3Power-Transistor,100V
Features
•N-channel,normallevel
•ExcellentgatechargexR
DS(on)
product(FOM)
•Verylowon-resistanceR
DS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC
1)
fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
100 V
R
DS(on),max
4.5 mΩ
I
D
137 A
Type/OrderingCode Package Marking RelatedLinks
IPI045N10N3 G PG-TO 262-3 045N10N -
1)
J-STD20 and JESD22