SPA06N80C3 英飞凌芯片 INFINEON 中文版规格书手册.pdf
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SPA06N80C3
CoolMOS
TM
Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute)
CoolMOS
TM
800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
2)
I
D
T
C
=25 °C
A
T
C
=100 °C
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=1.2 A, V
DD
=50 V
230 mJ
Avalanche energy, repetitive t
AR
3),4)
E
AR
I
D
=6 A, V
DD
=50 V
Avalanche current, repetitive t
AR
3),4)
I
AR
A
MOSFET dv /dt ruggedness dv /dt
V
DS
=0…640 V
V/ns
Gate source voltage
V
GS
static V
AC (f >1 Hz)
Power dissipation
P
tot
T
C
=25 °C
W
Operating and storage temperature
T
j
, T
stg
°C
Mounting torque M2.5 screws 50 Ncm
Value
6
3.8
18
±30
39
-55 ... 150
0.2
6
50
±20
V
DS
800
V
R
DS(on)max
@
T
j
= 25°C 0.9
Ω
Q
g,typ
31 nC
Product Summary
Type Package Marking
SPA06N80C3 PG-TO220-3 06N80C3
Rev. 2.92
Page 1
2018-02-12
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