IPI076N12N3 G IPP076N12N3 G
OptiMOS
TM
3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free
• Qualified according to JEDEC
1)
for target application
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
400
Avalanche energy, single pulse
E
AS
I
D
=100 A, R
GS
=25 W
230 mJ
Gate source voltage
3)
V
GS
±20 V
Operating and storage temperature
IEC climatic category; DIN IEC 68-1 55/175/56
Rev. 2.4 page 1 2013-09-25