Base part number
Standard Pack
Orderable Part Number
Form Quantity
IRF6648TRPbF DirectFET
™
Medium Can Tape and Reel 4800 IRF6648TRPbF
Package Type
Fig 1. Typical On-Resistance vs. Gate Voltage
DirectFET™ ISOMETRIC
MN
V
DSS
V
GS
R
DS(on)
60V min ±20V max
5.5m@ 10V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH SJ SP MZ MN
Description
The IRF6648PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET™ package is compati-
ble with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET™ package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6648PbF is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a primary
side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal performance enables
high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance.
Absolute Maximum Ratings
Parameter Max. Units
V
DS
Drain-to-Source Voltage 60
V
V
GS
Gate-to-Source Voltage ±20
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 86
A
I
D
@ T
C
= 70°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 69
I
DM
Pulsed Drain Current 260
E
AS
Single Pulse Avalanche Energy 47 mJ
I
AR
Avalanche Current 34 A
Notes
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.082mH, R
G
= 25, I
AS
= 34A.
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
IRF6648PbF
IRF6648TRPbF
Typical values (unless otherwise specified)
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
36nC 14nC 2.7nC 37nC 11nC 4.0V
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Optimized for Synchronous Rectification for
5V to 12V outputs
Low Conduction Losses
Ideal for 24V input Primary Side Forward Converters
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
DirectFET™ Power MOSFET
1 2017-04-06
4 6 8 10 12 14 16
V
GS,
Gate -to -Source Voltage (V)
0
10
20
30
40
50
60
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
)
I
D
= 17A
T
J
= 25°C
T
J
= 125°C
0 5 10 15 20 25 30 35 40
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 48V
V
DS
= 30V
I
D
= 17A
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