D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
N-Channel P-Channel
Drain-Source Voltage V
DS
30 -30
Gate-Source Voltage V
GS
± 20
T
A
= 25°C 7.3 -5.3
T
A
= 70°C 5.9 -4.2
Pulsed Drain Current I
DM
30 -30
Continuous Source Current (Diode Conduction) I
S
2.5 -2.5
T
A
= 25°C 2.5
T
A
= 70°C 1.6
Single Pulse Avalanche Energy E
AS
82 140 mJ
Avalanche Current I
AR
4.0 -2.8 A
Repetitive Avalanche Energy E
AR
0.20 mJ
Peak Diode Recovery dv/dt dv/dt 3.8 -2.2 V/ ns
Junction and Storage Temperature Range T
J,
T
STG
-55 to + 150 °C
HEXFET
®
Power MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
6/29/04
SO-8
l Generation V Technology
l Ultra Low On-Resistance
l Complimentary Half Bridge
l Surface Mount
l Fully Avalanche Rated
IRF7389PbF
Description
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient R
θJA
50
°C/W
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
Symbol Maximum Units
N-Ch P-Ch
V
DSS
30V -30V
R
DS(on)
0.029Ω 0.058Ω
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
www.irf.com 1
PD - 95462
l Lead-Free
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